Photodiode-Chip EPC-740-0.5 Preliminary 6/28/2007 rev. 04/07 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter AlGaAs/GaAs P (anode) up typ. dimensions (µm) 460 360 300 typ. thickness 300 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm Description Infrared-selective photodiode with narrow response range (680-770 nm) Applications Optical communications, safety equipment, light barriers PD-02 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit A 0.17 mm² Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IR = 10 µA Reverse voltage2 Symbol Min VR 5 V VR = 5 V ID 40 VR = 0 V Sλ 0.5 A/W Peak sensitivity VR = 0 V λP 740 nm Spectral range at 10 % VR = 0 V λ0.5 Spectral bandwidth at 50% VR = 0 V ∆λ0.4 80 nm Junction capacitance VR = 0 V CJ 40 pF Switching time VR = 5 V tr, tf 15/30 ns Dark current Responsivity at λP1 680 200 pA 770 nm 1 Measured on bare chip on TO-18 header 2 information only Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPС-740-0.5 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip EPC-740-0.5 Preliminary 6/28/2007 rev. 04/07 Spectral response (typical) normalized to Sλ at λP 1,0 Responsivity (arb. units) 0,8 0,6 0,4 0,2 0,0 600 650 700 750 800 850 900 Wavelength (nm) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2