VISHAY SS210-E3-5BT

SS29 & SS210
Vishay General Semiconductor
High Voltage Surface Mount Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
DO-214AA (SMB)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
90 V, 100 V
IFSM
75 A
VF
0.71 V
TJ max.
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS29
SS210
UNIT
S9
S10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum RMS voltage
VRMS
63
70
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
1.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
Peak repetitive reverse surge current at tp = 2 µs, 1 kHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
TJ, TSTG
- 55 to + 150
°C
Operating junction and storage temperature range
Document Number: 88749
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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SS29 & SS210
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage (1)
IF = 0.1 A
IF = 1.0 A
IF = 3.0 A
IF = 1.5 A
IF = 3.0 A
Maximum DC reverse current at rated VR (1)
TA = 25 °C
TA = 25 °C
TA = 25 °C
TA = 100 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
SYMBOL
SS29
SS210
UNIT
VF
0.43
0.75
0.95
0.71
0.85
V
IR
30
5
µA
mA
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS29
SS210
RθJA
RθJL
Maximum thermal resistance (1)
UNIT
85
25
°C/W
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS210-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
SS210-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
SS210HE3/52T (1)
0.096
52T
750
7" diameter plastic tape and reel
SS210HE3/5BT (1)
0.096
5BT
3200
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.0
2.5
D = 0.8
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
1.5
1.0
0.5
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
D = 0.5
2.0
D = 0.3
1.5
D = 1.0
D = 0.2
D = 0.1
1.0
T
0.5
D = tp/T
tp
0
0
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
Lead Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88749
Revision: 07-May-08
SS29 & SS210
Vishay General Semiconductor
10 000
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
100
75
50
25
0
TJ = 150 °C
1000
TJ = 125 °C
100
10
TJ = 25 °C
1
0.1
1
10
10
100
20
30
40
50
60
70
80
90
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Reverse Leakage Characteristics
1000
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 125 °C
10
TJ = 25 °C
1
100
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.4
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.096 (2.44)
0.084 (2.13)
0.220 REF.
0.008 (0.2)
0 (0)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
Document Number: 88749
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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