VISHAY UG30BPT

UG30APT thru UG30DPT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
3
• Solder dip 260 °C, 40 s
2
1
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-247AD (TO-3P)
PIN 1
PIN 2
PIN 3
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
50 V to 200 V
IFSM
300 A
trr
25 ns
VF
0.85 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG30APT
UG30BPT
UG30CPT
UG30DPT
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TC = 120 °C
IF(AV)
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300
A
TJ, TSTG
- 65 to + 150
°C
Operating and storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode
Maximum DC reverse
current at rated DC
blocking voltage per diode
Document Number: 88762
Revision: 05-Jun-08
TEST CONDITIONS
15 A
30 A
10 A
SYMBOL
UG30BPT
UG30CPT
UG30DPT
UNIT
VF
1.0
1.15
0.85
V
IR
15
800
µA
TJ = 100 °C
TA = 25 °C
TA = 100 °C
UG30APT
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
UG30APT thru UG30DPT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Maximum reverse
recovery time
IF = 15 A, VR = 30 V,
dI/dt = 50 A/µs,
IRR = 10 % IRM
Maximum recovered
stored charge
IF = 15 A, VR = 30 V,
dI/dt = 50 A/µs,
IRR = 10 % IRM
Typical junction
capacitance
4.0 V, 1 MHz
SYMBOL
UG30APT
UG30BPT
UG30CPT
UG30DPT
UNIT
trr
25
ns
TJ = 25 °C
TJ = 100 °C
trr
35
50
ns
TJ = 25 °C
TJ = 100 °C
Qrr
22
50
nC
CJ
70
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
(1)
UG30APT
RθJC
UG30BPT
UG30CPT
UG30DPT
2.0
UNIT
°C/W
Note:
(1) Thermal resistance from junction to case per diode mounted on heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-247AD
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
6.15
30
30/tube
Tube
UG30DPT-E3/45
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1000
Resistive or Inductive Load
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
36
30
24
18
12
6
0
TC = 120 °C
8.3 ms Single Half Sine-Wave
100
10
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88762
Revision: 05-Jun-08
UG30APT thru UG30DPT
Vishay General Semiconductor
60
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.01
0.4
IF = 15 A
VR = 30 V
Recovered Store Change/Reverse
Recovery Time (nC/ns)
Instantaneous Forward Current (A)
100
40
dI/dt = 100 A/µs
dI/dt = 50 A/µs
dI/dt = 100 A/µs
30
dI/dt = 150 A/µs
dI/dt = 50 A/µs
dI/dt = 20 A/µs
20
10
0
0.6
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Junction Temperature (°C)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Reverse Switching Characteristics Per Diode
1000
100
TJ = 100 °C
100
Junction Capacitance (pF)
Instantaneous Reverse Leakage
Current (µA)
dI/dt = 150 A/µs
dI/dt = 20 A/µs
50
10
TJ = 25 °C
1
0.1
10
TJ = 125 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01
0
20
40
60
80
1
0.1
100
1
Percent of Rated Peak Reverse Voltage (%)
10
100
Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.078 (1.98) REF.
10
0.170
(4.3)
0.840 (21.3)
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
10° TYP.
Both Sides
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.795 (20.2)
0.775 (19.6)
0.048 (1.22)
0.044 (1.12)
0.225 (5.7)
0.205 (5.2)
Document Number: 88762
Revision: 05-Jun-08
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 2
PIN 3
CASE
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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