New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS ® • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency 2 • Increased ruggedness for reverse avalanche capability 3 1 PIN 1 PIN 2 PIN 3 CASE • Negligible switching losses • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 100 V MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade IFSM 250 A Typical VF at IF = 20 A at TJ = 125 °C 0.63 V TJ max. 150 °C TYPICAL APPLICATIONS For use in high frequency converters, high efficiency SMPS, output rectification, freewheeling, reverse battery protection, dc-to-dc system and increased power density systems. Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Marking: V40100K Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100K UNIT VRRM 100 V IF(AV) 40 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 A Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 60 mH per diode EAS 67.5 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs TJ, TSTG - 40 to + 150 °C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Operating junction and storage temperature range Document Number: 89121 Revision: 25-Jun-09 per device per diode For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product V40100K Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IR = 1.0 mA Breakdown voltage (2) TA = 25 °C VBR IR = 10 mA Instantaneous forward voltage per diode (1) IF = 5 A IF = 10 A IF = 20 A TYP. MAX. 100 (minimum) - 105 (minimum) - 0.51 0.59 0.72 0.82 0.67 TA = 25 °C VF UNIT V V IF = 5 A IF = 10 A IF = 20 A TA = 125 °C 0.44 0.53 0.63 VR = 70 V TA = 25 °C TA = 125 °C 9 10 - µA mA VR = 100 V TA = 25 °C TA = 125 °C 21 1000 45 µA mA Reverse current at rated VR per diode (2) IR Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100K UNIT per diode per device RθJC 4 2 °C/W Typical thermal resistance case to heatsink RθCS 0.5 Maximum junction to case ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.85 4W 50/tube Tube V40100K-E3/4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 18 50 40 Average Power Loss (W) Average Forward Current (A) 16 30 20 10 D = 0.5 14 D = 0.8 D = 0.3 12 D = 0.2 10 8 D = 1.0 D = 0.1 T 6 4 2 D = tp/T tp 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89121 Revision: 25-Jun-09 New Product V40100K Vishay General Semiconductor 10 000 TA = 150 °C 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 125 °C TA = 100 °C 1 TA = 25 °C 1000 100 0.1 0 0.2 0.4 0.6 0.8 0.1 1 1 100 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 Junction to Case 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) Document Number: 89121 Revision: 25-Jun-09 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1