1SS344 SOT-23 SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching MARKING: H9 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 20 V IO Forward Continuous Current 500 mA IFM Peak Forward Current 1.5 A IFSM Surge Current@10ms 5 A PD Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Reverse voltage V(BR) Reverse current IR Forward voltage Total capacitance Reverse recovery time VF Ctot trr Test conditions IR=100μA Min Typ Max Unit 20 V VR=10V 20 VR=20V 100 IF=10mA 0.35 IF=100mA 0.43 IF=500mA 0.55 μA VR=0V, f=1MHz 120 pF IF= IR=50mA, VR=6V 20 ns １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５