BAS7 0T/-04T/-05T/-06T SCHOTTKY DIODE SOT-523 FEATURES Low Turn-on voltage z Fast switching z BAS70T Marking: 7C BAS70-04T Marking: 7D BAS70-05T Marking: 7E BAS70-06T Marking: 7F Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit VRRM VRWM VR 70 V Forward Continuous Current IFM 70 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0s IFSM 100 A Power Dissipation PD 150 mW Thermal Resistance Junction to Ambient Air RθJA 833 ℃/W Storage temperature TSTG -65-125 ℃ Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test V(BR) R IR= 10µA IR VR=50V 100 nA voltage VF IF=1mA IF=15mA 410 1000 mV capacitance CD VR=0, f=1MHz 2 pF trr IF=IR=10mA,Irr=0.1xIR, RL=100Ω 5 nS Reverse breakdown voltage Reverse voltage Forward Diode leakage current Reveres recovery time conditions MIN MAX 70 UNIT V １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BAS7 0T/-04T/-05T/-06T Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５