UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882S ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB772SL-x-AA3-R 2SB772SG-x-AA3-R 2SB772SL-x-AB3-R 2SB772SG-x-AB3-R 2SB772SL-x-T92-B 2SB772SG-x-T92-B 2SB772SL-x-T92-K 2SB772SG-x-T92-K 2SB772SL-x-T92-R 2SB772SG-x-T92-R www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package SOT-223 SOT-89 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 B C E B C E E C B E C B E C B Packing Tape Reel Tape Reel Tape Box Bulk Tape Reel 1 of 3 QW-R208-002.F 2SB772S PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current DC Collector Current Base Current RATINGS UNIT -40 V -30 V -5 V -7 A -3 A -0.6 A SOT-89 0.5 W Power Dissipation SOT-223 PD 1 W TO-92 0.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO ICP IC IB ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance COB Note 1: Pulse test: PW<300μs, Duty Cycle<2% TEST CONDITIONS IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-30V, IE=0 VCE=-30V, IB=0 VEB=-3V, IC=0 VCE=-2V, IC=-20mA VCE=-2V, IC=-1A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.1A VCB=-10V, IE=0, f=1MHz MIN -40 -30 -5 TYP MAX -1000 -1000 -1000 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 UNIT V V V nA nA nA V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160 ~ 320 E 200 ~ 400 2 of 3 QW-R208-002.F 2SB772S ■ PNP SILICON TRANSISTOR TYPICAL CHARACTERICS Collector-Emitter Saturation Voltage vs. Collector Current DC Current Gain vs. Collector Current 800 -103 VCE=-2V IC/IB=10 150°C 600 150°C -102 400 25°C -101 200 25°C 0 -10-1 -1 -100 -103 -101 -102 Collector Current, Ic (mA) -104 -10-1 Base-Emitter Saturation Voltage vs. -1.2 Collector Current -104 Collector Current vs. Collector-Emitter Voltage 2.0 IC/IB=10 -100 -101 -103 -102 Collector Current, Ic (mA) 1.6 25°C -0.8 1.2 0.8 -0.4 150°C 0 -10-1 -100 -101 -102 0.4 -103 -104 Collector Current, Ic (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE (V) 3 of 3 QW-R208-002.F