UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk 1 of 4 QW-R211-019.E 2SD667 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 80 V Emitter to Base Voltage VEBO 6 V Collector Current IC 1.0 A Collector Peak Current (Note2) ICP 2.0 A Collector Power Dissipation PC 0.9 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10ms, Duty cycle≤20% ELECTRICAL CHARACTERISTICS PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Gain Bandwidth Product Collector Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC=10μA, IE=0 IC=1mA, RBE=∞ IE=10μA, IC=0 VCB=120V, IE=0 VEB=6V, IC=0 VCE=5V, IC=150mA VCE=5V, IC=500mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCE= -5V, IC= -150mA VCB= -10V, IE=0, f=1MHz MIN 120 80 6 TYP 60 40 MAX UNIT V V V 500 nA 500 nA 320 0.5 1.1 140 20 V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE B 60-120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 100-200 D 160-320 2 of 4 QW-R211-019.E 2SD667 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Current vs. Collector-Emitter Voltage 1.2 Collector Current vs. Collector-Base Voltage 12 1.0 10 0.8 8 0.6 6 0.4 4 0.2 2 0 0 0 20 40 60 80 100 120 Collector-Emitter Voltage, VCE (V) 0 Emitter Current vs. Emitter-Base Voltage 120 50 100 150 200 250 Collector-Base Voltage, VCB (V) Collector Current vs. CollectorEmitter Voltage 180 160 Collector Current, IC (mA) Emitter Current, IE (μA) 100 80 60 40 20 120 IB=890μA 100 IB=690μA 80 60 IB=490μA 40 IB=290μA 20 0 IB=90μA 0 0 2 4 6 8 10 Emitter-Base Voltage, VEB (V) 12 0 Collector Current vs. CollectorEmitter Voltage 10 IB=69.6μA 8 IB=59.6μA IB=49.6μA 6 IB=39.6μA 4 IB=29.6μA IB=19.6μA 2 100 IB=707μA IB=607μA 80 IB=507μA 60 IB=407μA 40 IB=307μA 20 IB=207μA IB=9.6μA 0 IB=107μA 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 2 3 4 5 6 7 Collector-Emitter Voltage, VCE (V) Collector Current vs. CollectorEmitter Voltage 120 Collector Current, IC (mA) 12 Collector Current, IC (mA) IB=1090μA 140 0 IB=7μA 1 2 3 4 5 6 7 Collector-Emitter Voltage, VCE (V) 3 of 4 QW-R211-019.E 2SD667 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Current vs. CollectorEmitter Voltage 1200 1000 IB=13.25mA 800 IB=8.25mA 600 400 IB=3.25mA 200 0 0 2 4 6 8 10 Collector-Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R211-019.E