RO-P-DS-3021 A Preliminary Information MAAPGM0030-DIE 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation GaAs MSAG® Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAPGM0030-Die is a 2-stage power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ Multiple Band Point-to-Point Radio ♦ SatCom ♦ ISM Band Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 240 mA2, Pin = 18 dBm Parameter Symbol Typical Units Bandwidth f 5.0-9.0 GHz Output Power POUT 30 dBm Power Added Efficiency PAE 35 % 1-dB Compression Point P1dB 29 dBm Small Signal Gain G 17 dB Input VSWR VSWR 1.4:1 Output VSWR VSWR 1.8:1 Gate Supply Current IGG <4 mA Drain Supply Current IDD < 400 mA Output Third Order Intercept OTOI 38 dBm 3rd Order Intermodulation Distortion Single Carrier Level = 20 dBm IM3 -14 dBm 5th Order Intermodulation Distortion Single Carrier Level = 20 dBm IM5 -33 dBm Noise Figure NF 8 dB 2nd Harmonic 2f -20 dBc 3rd Harmonic 3f -35 dBc 1. 2. TB = MMIC Base Temperature Adjust VGG between –2.4 and –1.5V to achieve IDQ indicated. RO-P-DS-3021 A 5.0-9.0 GHz 1W Power Amplifier 2/6 MAAPGM0030-DIE Maximum Operating Conditions 3 Parameter Symbol Absolute Maximum Units Input Power PIN 23.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF, 40% Idss) IDQ 470 mA PDISS 3.2 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C 310 °C Quiescent DC Power Dissipated (No RF) Die Attach Temperature 3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Drain Supply Voltage VDD 4.0 8.0 10.0 V Gate Supply Voltage VGG -2.4 -2.0 -1.5 V Input Power PIN 18.0 21.0 dBm 150 °C Junction Temperature TJ Thermal Resistance ΘJC MMIC Base Temperature TB 25 °C/W Note 4 °C 4. Maximum MMIC Base Temperature = 150°C —ΘJC* VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ. 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Specifications subject to change without notice. 2 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3021 A 5.0-9.0 GHz 1W Power Amplifier 3/6 MAAPGM0030-DIE 50 50 POUT PAE 40 40 30 30 20 20 10 10 0 0 4 5 6 7 8 9 10 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 18 dBm. 50 50 40 40 30 30 20 20 10 10 0 0 4 5 6 7 8 9 PAE (%) POUT (dBm) POUT PAE 10 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 7 GHz. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3021 A 5.0-9.0 GHz 1W Power Amplifier 4/6 MAAPGM0030-DIE 50 VDD = 4 VDD = 8 VDD = 6 VDD = 10 P1dB (dBm) 40 30 20 10 0 4 5 6 7 8 9 10 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 6 25 5 20 4 15 3 10 2 VSWR Gain (dB) GAIN Input VSWR Output VSWR 5 1 4 5 6 7 8 9 10 Frequency (GHz) Figure 4. Small Signal and VSWR vs Frequency at VDD = 8V. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3021 A 5.0-9.0 GHz 1W Power Amplifier 5/6 MAAPGM0030-DIE Mechanical Information Chip Size: 2.480 x 1.98 x 0.075 mm (98 x 78 x 3 mils) 2.480 mm 0.990 mm GN D:G 1.980 mm VD VDD GN D:G GND :G GN D :G GN D:G GN D:G GN D:G GND :G GND: G GND :G GND :G GND :G GND :G GN D:G GN D:G GND :G GN D:G OU T OUT GND :G IN 0.980 mm GN D:G GN D:G IN GND: G 0.990 mm GND:G GND :G GND :G GND :G GN D:G GN D:G GN D:G GND :G GND: G GN D:G GN D:G GND :G GN D:G GN D :G GN D:G GND :G GND :G GND :G VG 0.126mm. 0 GND: G GN D:G GND :G 2.353 mm 1.440 mm 0 VGG Figure 5. Die Layout Chip edge to bond pad dimensions are shown to the center of the bond pad. Bond Pad Dimensions Pad Size (µm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VDD 200 x 150 8x6 DC Gate Supply Voltage VGG 150 x 150 4x6 Specifications subject to change without notice. 5 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3021 A 5.0-9.0 GHz 1W Power Amplifier 6/6 MAAPGM0030-DIE VDD 0.1 µF 100 pF GND :G VD VDD GN D:G GN D:G GND:G GND :G GND :G GND :G GN D:G GN D:G GN D:G GND: G GN D:G GND :G GND :G GN D :G GN D:G RFOUT GND :G RFIN OU T OUT GN D:G IN GND :G GND :G IN GN D:G GN D:G GND: G GND:G GND: G GND :G GND :G GND :G GN D:G GN D:G GND :G GND :G GN D:G GN D:G GN D:G GND :G GN D:G GN D:G GND :G VG GN D:G GND :G GND:G VGG 100 pF VGG 0.1 µF Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information.