Preliminary Datasheet RO-P-DS-3084 A MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block MAAMGM0007-DIE Features ♦ ♦ ♦ ♦ ♦ 0.15 Watt Saturated Output Power Level Single Bias Operation Variable Drain Voltage (4-6V) Operation GaAs MSAG™ Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAMGM0007-Die is a single stage distributed amplifier with single bias operation. This product is fully matched to 50 ohms on both the input and output. It can be used as a driver stage in high power applications. Primary Applications ♦ Test Equipment ♦ Electronic Warfare ♦ Radar Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, Pin = 16 dBm Parameter 1. Symbol Typical Units Bandwidth f 2.0-18.0 GHz Output Power POUT 22 dBm 1-dB Compression Point P1dB 19 dBm Small Signal Gain G 8 dB Noise Figure NF 6 dB Input VSWR VSWR 2.0:1 Output VSWR VSWR 2.0:1 Drain Supply Current IDD < 250 TB = MMIC Base Temperature mA RO-P-DS-3084 A 2/6 MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block Maximum Operating Conditions 2 Parameter Symbol Absolute Maximum Units Input Power PIN 20.0 dBm Drain Supply Voltage VDD +8.0 V Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C 310 °C Die Attach Temperature 2. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Symbol Drain Supply Voltage VDD Input Power PIN Junction Temperature TJ Thermal Resistance ΘJC MMIC Base Temperature TB Min Typ Max Unit 4.0 5.0 6.0 V 16.0 18.0 dBm 150 °C 58 °C/W Note 3 °C 3. Maximum MMIC Base Temperature = 150°C —ΘJC* VDD * IDD Operating Instructions This device is static sensitive. Please handle with care. Specifications subject to change without notice. 2 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 RO-P-DS-3084 A MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block 50 20 40 6 SSG Input VSWR Output VSWR 4V 5V 6V 45 16 5 12 4 8 3 4 2 30 25 20 VSWR 35 Gain (dB) Output Power (dBm) 3/6 15 10 5 0 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency (GHz) Frequency (GHz) Figure 1. Output Power vs. Frequency and Drain Voltage at Pin=16dBm. Figure 2. Small Signal Gain and Input and Output VSWR vs. Frequency at VD=5V 50 50 4V 5V 6V 45 40 18 4V 5V 6V 45 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) Frequency (GHz) Figure 3. Saturated Output Power vs. Frequency and Drain Voltage. Figure 4. 1dB Compression Point vs. Frequency and Drain Voltage. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 17 18 RO-P-DS-3084 A MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block 1.0 30 2GHz 6GHz 10GHz 15GHz 18GHz 27 24 Output Power (dBm) 4/6 2GHz 6GHz 10GHz 0.8 15GHz 18GHz 21 18 0.6 15 12 0.4 9 6 0.2 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.0 20 0 Input Power (dBm) 4V Gain 5V Gain 6V Gain 4V NF 5V NF 6V NF 14 12 10 10 8 8 6 6 4 4 2 2 0 0 3 4 5 6 7 8 9 10 11 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Figure 6. RF Drain Current vs. Input Power and Frequency at VD=5V. 12 2 2 Input Power (dBm) Figure 5. Output Power vs. Input Power and Frequency at VD=5V. 14 1 12 13 14 15 16 17 Frequency (GHz) Figure 7. Small Signal Gain and Noise Figure vs. Frequency and Drain Voltage. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 18 19 20 RO-P-DS-3084 A 5/6 MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block Mechanical Information Chip Size: 1.67 x 3.00 x 0.075 mm (65 x 118 x 3 mils) 3.000mm 1.617mm 1.417mm 1.217mm 0.817mm 0.162mm 1.665mm VD_5 GND:G 1.503mm VD_6 VD_7 VD_8 1.558mm GND:G GND:G GND:G GN D:G G: DN G G: DN G G: DN G GND:G 0.907mm OUT GND:G GND:G GND:G GND:G 0.367mm GND:G GND:G GND:G GN D:G GND:G GND:G GND:G GND:G GND:G GND:G IN GND :G GND:G GND:G 0 Figure 8. Die Layout 2.838mm 0 Chip edge to bond pad dimensions are shown to the center of the bond pad. Bond Pad Dimensions Pad Size (µm) Size (mils) RF In and Out 150 x 150 6x6 5 Volt Supply: VD_5 150 x 150 6x6 6 Volt Supply: VD_6 100 x 100 4x4 7 Volt Supply: VD_7 100 x 100 4x4 8 Volt Supply: VD_8 100 x 100 4x4 Specifications subject to change without notice. 5 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 RO-P-DS-3084 A 6/6 MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block VDD 0.1 µF 100 pF GND:G VD_5 VD_6 VD_7 VD_8 GND:G GND :G GND:G GND :G G: DN G G: DN G G : DN G GND:G RFOUT OUT GND:G G ND :G GND:G GND:G GN D:G GN D:G RFIN GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G IN GND :G GND:G GND:G Figure 9. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Refer to table below for bonding to achieve desired operation. Drain Voltage to Pad Connection Applied Voltage (Volts) Operational Voltage (Volts) 5 Volt Supply: VD_5 4 5 6 4 5 6 6 Volt Supply: VD_6 6 5 7 Volt Supply: VD_7 7 5 8 Volt Supply: VD_8 8 5 Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298