3.4 V, 1.2 W RF Power Amplifier IC MA02107AF V 1.0 Features § Ideal for Pager Applications § +30.8 dBm Output Power § 30.8 dB Power Gain § Single Positive Supply § Class AB Bias § 50 Ohm Input Impedance § Single Capacitor Output Match Functional Schematic V DD1 V DD2 N/C GND GND GND GND GND RF OUT/V DD3 RF IN GND GND GND GND N/C N/C Description The MA02107AF is a three stage power amplifier, designed for paging applications to have an output power of +30.8 dBm with an input power of 0 dBm. This power amplifier operates at +3.4 volts with 55% typical power added efficiency. The MA02107AF is mounted in a standard outline 16-pin TSSOP plastic package. The MA02107AF is fabricated using M/A-COM’s self-aligned MSAG ®-Lite MESFET process for a low single supply voltage, high power efficiency, and excellent reliability. Ordering Information Part Number MA02107AF-R7 Description Pin Configuration Pin Function 1 VDD1 Description First Stage Supply Voltage 2 N/C Not Connected 3 GND Ground 4 GND Ground 5 RFIN RF Input 6 GND Ground 7 GND Ground 8 N/C Not Connected 9 N/C Not Connected 10 GND Ground Ground 7 inch, 1000 piece reel 13 inch, 3000 piece reel 11 GND MA02107AF-R13 12 RFOUT /VDD3 MA02107AF-SMB Sample Test Board 13 GND Ground 14 GND Ground 15 GND Ground 16 VDD2 Second Stage Supply Voltage RF Output/Third Stage Supply Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 1 Part 3.4 Description V, 1.2 W RF Power Amplifier IC MA02107AF V 1.0 Electrical Specifications: T S = 35 °C , Z0 = 50 Ω 1 Parameter Frequency Output Power Power Gain Power Added Efficiency Input Return Loss 2nd Harmonics 3rd Harmonics Thermal Resistance Stability 2,3 Test Conditions 3rd Stage FET to solder point of pin 13 +3.0 V < VCC < +5.0 V, POUT < +31 dBm, VSWR < 5:1, -40ºC < TC < +85ºC, RBW = 3 MHz max hold Units Min MHz dBm dB % dB dBc dBc o C/W 900 30.0 45 10 Typ Max 942 30.8 30.8 55 15 -35 -50 41 -29 -45 All spurs < -60 dBc 1. Ts is the temperature measured at the soldering point of pin 13. 2. Unless otherwise specified, input power is 0 dBm, VDD is +3.45 V, and test frequency is 900 MHz. 3. The output is externally matched to 50 ohms. Absolute Maximum Ratings1 Parameter Absolute Maximum Max Input Power Operating Voltages Operating Temperature, Ts Channel Temperature Storage Temperature +6 dBm +5.0 volts -40 °C to +70 °C +150 °C -40 °C to +150 °C 1. Exceeding any one or combination of these limits may cause permanent damage. Application Information Static Sensitivity Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling these devices. Board Layout Sample Test Board 50 Ohm Lead Transition Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 Part 3.4 Description V, 1.2 W RF Power Amplifier IC MA02107AF V 1.0 1 900 MHz 8.4 - j9.2 Ω 925 MHz 850 MHz 40 -1 0 -15 -170 -160 180 0 0.5 0.2 170 Output Match Impedance (as seen from pin 12) -80 -90 -100 -110 -12 0 -1 30 Typical Performance Curves Output Power and PAE vs. Input Power Output Power, PAE, and VSWR vs. Fequency 40 60 60 35 50 50 30 40 3:1 η 25 30 20 20 ƒ = 901 MHz V DD = 3.4 V 15 10 -10 20 (%) VSWR 5 30 60 30 η 25 50 POUT 20 40 15 30 10 20 ƒ = 901 MHz P IN = 0 dBm 0.5 1.0 1.5 2.0 2.5 3.0 VDD , Supply Voltage (Volts) 3.5 POUT, Output Power (dBm) 40 η, Pwr Added Efficiency (%) 70 0 0.0 850 900 ƒ, Frequency (MHz) 950 1:1 1000 Harmonics 35 5 2:1 POUT 0 800 Output Power and PAE vs. Supply Voltage P OUT , Output Power (dBm) 30 10 10 0 -5 0 PIN, Input Power (dBm) η 40 POUT (dBm) and POUT Pwr Added Efficiency POUT, Output Power (dBm) η 20 10 0 -10 -20 10 -30 0 -40 4.0 ƒο = 901 MHz PIN = 0 dBm V DD = 3.4 V ƒο 2ƒο 3ƒο Frequency 4ƒο 5ƒο Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 Part 3.4 Description V, 1.2 W RF Power Amplifier IC MA02107AF V 1.0 Application Schematic +VDD (+3.4V) C1 N/C RF INPUT C2 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 L1 RF OUTPUT T1 C5 C3 N/C C4 N/C List of components: C1 = 0.1µF Kemet multilayer ceramic chip capacitor (C1206C104K5RAC) C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC) C4 = 6.8 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL) C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL) L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB) T1 = 0.19" of 50 ohm grounded coplanar waveguide (60 mil GETEK board) TSSOP-16 Package Dimensions in millimeters Dimensions in inches SYMBOL MIN NOM MAX MIN NOM MAX A A1 A2 b C D E E1 e L L1 y 1.05 0.05 — 0.20 — 4.90 6.20 4.30 — 0.50 0.90 — 0° 1.10 0.10 1.00 0.25 0.127 5.075 6.40 4.40 0.65 0.60 1.00 — 4° 1.20 0.15 1.05 0.28 — 5.10 6.60 4.50 — 0.70 1.10 0.10 8° 0.041 0.002 — 0.008 — 0.193 0.244 0.169 — 0.020 0.035 — 0° 0.043 0.004 0.039 0.010 0.005 0.200 0.252 0.173 0.025 0.024 0.039 — 4° 0.047 0.006 0.041 0.011 — 0.201 0.260 0.177 — 0.028 0.043 0.004 8° θ NOTES: 1. 2. 3. 4. 5. 6. Controlling dimension: mm Lead frame material: EFTEC 64 Dimension “D” does not include mold flash, protrusions or gate burrs Dimension “E” does not include interlead flash or protrusions Tolerance: ±0.254 mm (±0.010″) unless otherwise specified End flash max: 0.12 mm (0.005 ″) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 4