VISHAY 1N4150_12

1N4150
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• AEC-Q101 qualified
• High forward current capability
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free
definition
according
to
IEC
61249-2-21
94 9367
Applications
• High speed switch and general purpose use in
computer and industrial applications
Mechanical Data
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Parts Table
Part
1N4150
Ordering code
Type Marking
Remarks
1N4150-TR or 1N4150-TAP
1N4150
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
tp = 1 µs
Peak forward surge current
Average peak forward current
Forward continuous current
Value
Unit
VRRM
50
V
VR
50
V
IFSM
4
A
IFRM
600
mA
IF
300
mA
VR = 0
IFAV
150
mA
l = 4 mm, TL = 45 °C
Ptot
440
mW
l = 4 mm, TL ≤ 25 °C
Ptot
500
mW
Average forward current
Power dissipation
Symbol
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
l = 4 mm, TL = constant
RthJA
350
K/W
Tj
175
°C
Tstg
- 65 to + 175
°C
Junction temperature
Storage temperature range
Document Number 85522
Rev. 1.8, 20-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
1N4150
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Max.
Unit
IF = 1 mA
VF
540
620
mV
IF = 10 mA
VF
660
740
mV
IF = 50 mA
VF
760
860
mV
IF = 100 mA
VF
820
920
mV
IF = 200 mA
VF
870
1000
mV
VR = 50 V
IR
100
nA
VR = 50 V, Tj = 150 °C
IR
100
µA
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
2.5
pF
Reverse recovery time
IF = IR = (10 to 100) mA, iR = 0.1
x IR, RL = 100 Ω
trr
4
ns
Forward voltage
Reverse current
Typ.
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
Scattering Limit
10
I F - Forward Current (mA)
I R - Reverse Current (µA)
100
1
0.1
VR = 50 V
0.01
0
94 9100
40
80
120
160
100
Scattering Limit
10
1
Tj = 25 °C
0.1
200
0
Tj - Junction Temperature (°C)
94 9162
Figure 1. Reverse Current vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
Package Dimensions in mm (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85522
Rev. 1.8, 20-Aug-10
[email protected], [email protected], [email protected]
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000