VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK (TO-251AA) D-PAK (TO-252AA) Base cathode 4 Base cathode 4 • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC VS-10UT10 VS-10WT10FN • Designed and qualified according to JEDEC-JESD47 PRODUCT SUMMARY APPLICATIONS Package I-PAK (TO-251AA), D-PAK (TO-252AA) IF(AV) 10 A VR 100 V VF at IF 0.66 V IRM max. 4 mA at 125 °C TJ max. 175 °C Diode variation Single die EAS 54 mJ • High efficiency SMPS • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 100 V VRRM VF 10 Apk, TJ = 125 °C (typical) TJ Range 0.615 V - 55 to 175 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS VS-10UT10 VS-10WT10FN UNITS 100 V TJ = 25 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3 A, L = 12 mH IAR Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse (see fig. 8) Repetitive avalanche current 50 % duty cycle at TC = 159 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied (1) VALUES UNITS 10 A 610 A 110 54 mJ IAS at TJ max. A Note (1) Measured connecting 2 anode pins Revision: 10-Aug-11 Document Number: 94647 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 5A TJ = 25 °C 10 A VFM (1)(2) Forward voltage drop - UNITS 0.735 0.810 0.840 0.890 5A 0.530 - 0.615 0.660 0.730 0.770 - 50 μA TJ = 125 °C 20 A TJ = 25 °C IRM (1) MAX. 20 A 10 A Reverse leakage current TYP. 0.630 VR = Rated VR TJ = 125 °C V - 4 mA Junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 400 - pF Series inductance LS Measured lead to lead 5 mm from package body 8.0 - nH - 10 000 V/μs Maximum voltage rate of change dV/dt Rated VR Notes (1) Pulse width < 300 μs, duty cycle < 2 % (2) Only 1 anode pin connected THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Typical thermal resistance, case to heatsink RthCS UNITS - 55 to 175 °C DC operation 2 °C/W 0.3 Approximate weight Marking device 0.3 g 0.01 oz. Case style I-PAK 10UT10 Case style D-PAK 10WT10FN 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) VALUES TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C 1 0.2 175 °C 10 150 °C 125 °C 1 100 °C 0.1 75 °C 0.01 50 °C 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Aug-11 Document Number: 94647 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 20 40 60 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) 10 180 175 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 170 DC 165 160 155 Square wave (D = 0.50) 80 % rated VR applied 150 180° 120° 90° 60° 30° 8 6 RMS limit 4 DC 2 See note (1) 0 145 0 2 4 6 8 10 12 14 16 0 3 6 9 12 15 IF(AV) Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 10-Aug-11 Document Number: 94647 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN IFSM - Non-Repetitive Surge Current (A) www.vishay.com Vishay Semiconductors 1000 100 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Avalanche Current (A) 100 TJ = 25 °C 10 TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) Avalanche Energy (mJ) 100 10 TJ = 25 °C TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Revision: 10-Aug-11 Document Number: 94647 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 U T 10 FN TRL 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 A) 3 - Package: U = I-PAK W = D-PAK 4 - T = Trench 5 - Voltage code (100 V) 6 - TO-252AA (D-PAK) 7 - D-PAK, I-PAK: None = Tube (75 pieces) D-PAK only: TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95024 Part marking information www.vishay.com/doc?95025 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95026 Revision: 10-Aug-11 Document Number: 94647 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors I-PAK - S, D-PAK DIMENSIONS FOR I-PAK - S in millimeters E A b3 E1 c2 3 2 1 L L5 L4 H D D1 4 b2 e c e SYMBOL DIMENSIONAL REQUIREMENTS MIN. NOM. MAX. E 6.40 6.60 6.70 L 3.98 4.13 4.28 L4 0.66 0.76 0.86 L5 1.96 2.16 2.36 D 6.00 6.10 6.20 H 11.05 11.25 11.45 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b3 5.21 5.34 5.46 b4 0.41 0.51 0.61 e A Document Number: 95024 Revision: 05-Jan-11 b3 b 2.286 BSC 2.20 2.30 2.38 c 0.40 0.50 0.60 c2 0.40 0.50 0.60 D1 5.30 - - E1 4.40 - - For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Outline Dimensions I-PAK - S, D-PAK Vishay Semiconductors DIMENSIONS FOR D-PAK in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 3 (2) L5 2 b 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 MILLIMETERS MIN. 1 A c b2 SYMBOL 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail “C” 2x e 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 INCHES MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. INCHES MAX. MIN. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 3 2.29 BSC MAX. L1 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 95024 Revision: 05-Jan-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1