VISHAY 8TQ080GPBF

VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
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Vishay Semiconductors
Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
3
Anode
1
Cathode
TO-220AC
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Designed and qualified according to JEDEC-JESD47
Package
TO-220AC
IF(AV)
8A
VR
80 V, 100 V
VF at IF
0.58 V
IRM max.
7 mA at 125 °C
TJ max.
175 °C
Diode variation
Single die
EAS
7.5 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-8TQ...G Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
8
A
Rectangular waveform
VRRM
100
V
IFSM
tp = 5 μs sine
850
A
VF
8 Apk, TJ = 125 °C
0.58
V
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse
voltage
VR
Maximum working
peak reverse voltage
VRWM
VS-8TQ080GPbF
VS-8TQ080G-N3
VS-8TQ100GPbF
VS-8TQ100G-N3
UNITS
80
80
100
100
V
ABSOLUTE MAXIMUM RATINGS
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 157 °C, rectangular waveform
8
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
PARAMETER
Repetitive avalanche current
Revision: 11-Oct-11
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
850
UNITS
A
230
Document Number: 94263
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
8A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
16 A
8A
TJ = 125 °C
16 A
Maximum reverse leakage curent
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Typical series inductance
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Rated VR
VALUES
UNITS
0.72
0.88
V
0.58
0.69
0.28
mA
7
500
pF
8
nH
10 000
V/µs
VALUES
UNITS
- 55 to 175
°C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
2.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
2
g
0.07
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Approximate weight
Mounting torque
Marking device
Revision: 11-Oct-11
°C/W
Case style TO-220AC
8TQ080G
8TQ100G
Document Number: 94263
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
Vishay Semiconductors
100
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
TJ = 25 °C
0.001
0.0001
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0
10 20 30 40 50 60 70 80
90 100 110
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
Single pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 11-Oct-11
Document Number: 94263
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
Vishay Semiconductors
180
7
175
6
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
DC
170
165
160
Square wave (D = 0.50)
80 % rated VR applied
155
150
145
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
5
RMS limit
4
3
DC
2
1
See note (1)
140
0
2
0
4
6
8
10
12
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 11-Oct-11
Document Number: 94263
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
T
Q
100
G
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
T = TO-220
4
-
Q = Schottky “Q” series
5
-
Voltage rating (100 = 100 V)
6
-
G = Schottky generation
7
-
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-8TQ080GPbF
50
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-8TQ080G-N3
50
1000
Antistatic plastic tube
VS-8TQ100GPbF
50
1000
Antistatic plastic tube
VS-8TQ100G-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
Revision: 11-Oct-11
www.vishay.com/doc?95221
TO-220AC PbF
www.vishay.com/doc?95224
TO-220AC -N3
www.vishay.com/doc?95068
www.vishay.com/doc?95291
Document Number: 94263
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
Q
3
D
D
L1
E
A1
C
Thermal pad
C
H1
D2
Detail B
(6)
2 x b2
2xb
Detail B
θ
D1
1
2
A
(6)
H1
(7)
(6) D
1
2 3
Lead tip
L3
C
E1
(6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
L4
L
c
e1
A
Conforms to JEDEC outline TO-220AC
View A - A
A2
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
A2
2.56
2.92
0.101
0.115
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
MILLIMETERS
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
E2
-
0.76
-
0.030
7
e
2.41
2.67
0.095
0.105
e1
4.88
5.28
0.192
0.208
4
H1
6.09
6.48
0.240
0.255
L
13.52
14.02
0.532
0.552
4
L1
3.32
3.82
0.131
0.150
c
0.36
0.61
0.014
0.024
L3
1.78
2.13
0.070
0.084
c1
0.36
0.56
0.014
0.022
4
L4
0.76
1.27
0.030
0.050
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.

90° to 93°
6, 7
2
2
90° to 93°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
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Document Number: 91000