ONSEMI 2N2907A

2N2907A
Switching Transistor
PNP Silicon Epitaxial
Features
• MIL−PRF−19500/291 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
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COLLECTOR
3
Temperature Range Screening
2
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PT
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PT
1.5
12
W
mW/°C
TJ, Tstg
−65 to +200
°C
Operating and Storage Junction
Temperature Range
1
EMITTER
TO−18
CASE 206AA
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
325
°C/W
Thermal Resistance, Junction−to−Case
RqJC
150
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
TO−18
Bulk
JAN2N2907A
JANTX2N2907A
JANTXV2N2907A
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 0
1
Publication Order Number:
2N2907A/D
2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
−
Vdc
Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0)
V(BR)CBO
−60
−
Vdc
Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ICEX
−
−50
nAdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 150°C)
ICBO
−
−
−0.01
−10
−
−50
75
100
100
100
50
−
−
−
300
−
−
−
−0.4
−1.6
−0.6
−
−1.3
−2.6
200
−
Characteristic
OFF CHARACTERISTICS
Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
IB
mAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc) (Note 1)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 1)
hFE
Collector −Emitter Saturation Voltage (Note 1)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 1)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product (Notes 1 and 2),
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
|hfe|, (IC = −20 mAdc, VCE = −20 Vdc, f = 100 MHz)
MHz
2.0
−
−
Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
pF
ton
−
45
ns
td
−
10
ns
tr
−
40
ns
toff
−
100
ns
ts
−
80
ns
tf
−
30
ns
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc) (Figures NO TAG and
NO TAG)
Rise Time
Turn−Off Time
Storage Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure NO TAG)
Fall Time
1. Pulse Test: See section 4 of MIL−STD−750.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
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2
2N2907A
PACKAGE DIMENSIONS
TO−18 3
CASE 206AA−01
ISSUE O
B
A
B
DETAIL X
U
P
C
L
R
F
U
A
SEATING
PLANE
K
NOTE 5
E
T
NOTE 7
D NOTES 4 & 6
0.007 (0.18MM) A B S C
3X
DETAIL X
M
N
H
2
1
3
J
M
C
LEAD IDENTIFICATION
DETAIL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
5.31
5.84
4.52
4.95
4.32
5.33
0.41
0.53
--0.76
0.41
0.48
0.91
1.17
0.71
1.22
12.70
19.05
6.35
--45_BSC
2.54 BSC
--1.27
1.37 BSC
--0.76
2.54
---
INCHES
MIN
MAX
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
--0.030
0.016
0.019
0.036
0.046
0.028
0.048
0.500
0.750
0.250
--45 _BSC
0.100 BSC
--0.050
0.054 BSC
--0.030
0.100
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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3
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Sales Representative
2N2907A/D