2N2907A Switching Transistor PNP Silicon Epitaxial Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military http://onsemi.com COLLECTOR 3 Temperature Range Screening 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PT 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PT 1.5 12 W mW/°C TJ, Tstg −65 to +200 °C Operating and Storage Junction Temperature Range 1 EMITTER TO−18 CASE 206AA STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 325 °C/W Thermal Resistance, Junction−to−Case RqJC 150 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping TO−18 Bulk JAN2N2907A JANTX2N2907A JANTXV2N2907A © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 0 1 Publication Order Number: 2N2907A/D 2N2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) V(BR)CEO −60 − Vdc Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO −60 − Vdc Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 150°C) ICBO − − −0.01 −10 − −50 75 100 100 100 50 − − − 300 − − − −0.4 −1.6 −0.6 − −1.3 −2.6 200 − Characteristic OFF CHARACTERISTICS Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IB mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (Note 1) (IC = −500 mAdc, VCE = −10 Vdc) (Note 1) hFE Collector −Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS fT Current −Gain − Bandwidth Product (Notes 1 and 2), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) |hfe|, (IC = −20 mAdc, VCE = −20 Vdc, f = 100 MHz) MHz 2.0 − − Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF ton − 45 ns td − 10 ns tr − 40 ns toff − 100 ns ts − 80 ns tf − 30 ns SWITCHING CHARACTERISTICS Turn−On Time Delay Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) (Figures NO TAG and NO TAG) Rise Time Turn−Off Time Storage Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = 15 mAdc) (Figure NO TAG) Fall Time 1. Pulse Test: See section 4 of MIL−STD−750. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 2N2907A PACKAGE DIMENSIONS TO−18 3 CASE 206AA−01 ISSUE O B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.41 0.53 --0.76 0.41 0.48 0.91 1.17 0.71 1.22 12.70 19.05 6.35 --45_BSC 2.54 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --0.030 0.016 0.019 0.036 0.046 0.028 0.048 0.500 0.750 0.250 --45 _BSC 0.100 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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