ONSEMI MMBT2907AWT1G

MMBT2907AWT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
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Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−600
mAdc
Symbol
Max
Unit
PD
150
mW
RqJA
833
°C/W
TJ, Tstg
−55 to
+150
°C
Collector Current − Continuous
2
EMITTER
3
SC −70/SOT−323
CASE 419 −04
STYLE 3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
1
2
MARKING DIAGRAM
20 MG
G
1
20
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
MMBT2907AWT1G
Package
Shipping†
SC−70
3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 5
1
Publication Order Number:
MMBT2907AWT1/D
MMBT2907AWT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 2)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
−
Vdc
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
−60
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Base Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
IBL
−
−50
nAdc
Collector Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ICEX
−
−50
nAdc
75
100
100
100
50
−
−
−
−
−
−
−
−0.4
−1.6
−
−
−1.3
−2.6
fT
200
−
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
pF
ton
−
45
td
−
10
tr
−
40
ts
−
80
tf
−
30
toff
−
100
OFF CHARACTERISTICS
ON CHARACTERISTICS(3)
DC Current Gain (Note 2)
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
HFE
Collector −Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −50 mAdc, VCE = 20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
(VCC = −30 Vdc,
IC = −150 mAdc, IB1 = −15 mAdc)
Storage Time
Fall Time
Turn−Off Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = 15 mAdc)
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
ns
MMBT2907AWT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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3
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MMBT2907AWT1/D