ONSEMI 2N4033

2N4029, 2N4033
Product Preview
Small Signal Switching
Transistor
PNP Silicon
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Features
COLLECTOR
3
• MIL−PRF−19500/512 Qualified
• Available as JAN, JANTX, and JANTXV
2
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−80
Vdc
Collector −Base Voltage
VCBO
−80
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
1
Adc
Total Device Dissipation @ TA = 25°C
2N4029
2N4033
PT
Total Device Dissipation @ TC = 25°C
2N4029
2N4033
PT
Operating and Storage Junction
Temperature Range
1
EMITTER
W
0.5
0.8
W
1.0
4.0
TJ, Tstg
−65 to +200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
2N4029
2N4033
RqJA
Thermal Resistance, Junction−to−Case
2N4029
2N4033
RqJC
TO−18
CASE 206AA
STYLE 1
2N4029
TO−39
CASE 205AB
STYLE 1
2N4033
THERMAL CHARACTERISTICS
°C/W
325
195
ORDERING INFORMATION
Level
JAN
°C/W
150
40
Device
Package
Shipping
2N4029
TO−18
Bulk
2N4033
TO−39
Bulk
JANTX
JANTXV
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. P0
1
Publication Order Number:
2N4029/D
2N4029, 2N4033
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
−80
−
−
−25
−
−
−10
−10
mA
nA
−
−
−10
−25
mA
nA
50
100
70
25
−
300
−
−
−
−
−
−0.15
−0.5
−1.0
−
−
−0.9
−1.2
1.5
6.0
−
20
−
80
OFF CHARACTERISTICS
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc)
Collector −Emitter Cutoff Current
(VCE = −60 Vdc)
ICES
Collector−Base Cutoff Current
(VCB = −80 Vdc, IE = 0)
(VCB = −60 Vdc, IE = 0)
ICBO
Emitter−Base Cutoff Current
(VEB = −5 Vdc)
(VEB = −3 Vdc)
IEBO
Vdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = −0.1 mAdc, VCE = −5 Vdc)
(IC = −100 mAdc, VCE = −5 Vdc)
(IC = −500 mAdc, VCE = −5 Vdc)
(IC = −1 Adc, VCE = −5 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1 Adc, IB = −100 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = −50 mAdc, VCE = −10 Vdc, f = 100 MHz)
|hfe|
Output Capacitance
(VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Cobo
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Cibo
−
pF
pF
SWITCHING CHARACTERISTICS
Delay Time
(Reference Figure in MIL−PRF−19500/512)
td
−
15
ns
Rise Time
(Reference Figure in MIL−PRF−19500/512)
tr
−
25
ns
Storage Time
(Reference Figure in MIL−PRF−19500/512)
ts
−
175
ns
Fall Time
(Reference Figure in MIL−PRF−19500/512)
tf
−
35
ns
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
2N4029, 2N4033
PACKAGE DIMENSIONS
TO−18 3
CASE 206AA
ISSUE A
B
A
B
DETAIL X
U
P
C
L
R
F
U
A
SEATING
PLANE
K
NOTE 5
E
T
NOTE 7
D NOTES 4 & 6
0.007 (0.18MM) A B S C
3X
DETAIL X
M
N
H
2
1
3
J
M
C
LEAD IDENTIFICATION
DETAIL
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3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
5.31
5.84
4.52
4.95
4.32
5.33
0.41
0.53
--0.76
0.41
0.48
0.91
1.17
0.71
1.22
12.70
19.05
6.35
--45_BSC
2.54 BSC
--1.27
1.37 BSC
--0.76
2.54
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
INCHES
MIN
MAX
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
--0.030
0.016
0.019
0.036
0.046
0.028
0.048
0.500
0.750
0.250
--45 _BSC
0.100 BSC
--0.050
0.054 BSC
--0.030
0.100
---
2N4029, 2N4033
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
B
A
B
DETAIL X
U
P
C
L
R
F
U
A
SEATING
PLANE
K
NOTE 5
E
T
NOTE 7
D NOTES 4 & 6
3X
0.007 (0.18MM) A B S C
DETAIL X
M
N
H
2
1
3
J
M
C
LEAD IDENTIFICATION
DETAIL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
8.89
9.40
8.00
8.51
6.10
6.60
0.41
0.48
0.23
3.18
0.41
0.48
0.71
0.86
0.73
1.02
12.70
14.73
6.35
--45_BSC
5.08 BSC
--1.27
1.37 BSC
--0.76
2.54
---
INCHES
MIN
MAX
0.350
0.370
0.315
0.335
0.240
0.260
0.016
0.019
0.009
0.125
0.016
0.019
0.028
0.034
0.029
0.040
0.500
0.580
0.250
--45 _BSC
0.200 BSC
--0.050
0.054 BSC
--0.030
0.100
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N4029/D