2N4036 2N4037 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD PD TJ, Tstg ΘJC 2N4036 90 65 7.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N4036 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V 1.0 ICBO VCB=60V ICEX VCE=85V, VEB=1.5V 100 ICEX VCE=30V, VEB=1.5V, TC=150°C IEBO VEB=7.0V 10 IEBO VEB=5.0V BVCEO IC=100mA 65 VCE(SAT) IC=150mA, IB=15mA 0.65 VBE(SAT) IC=150mA, IB=15mA 1.4 VBE(ON) VCE=10V, IC=150mA hFE VCE=10V, IC=0.1mA 20 hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=150mA 40 140 hFE VCE=2.0V, IC=150mA 20 200 hFE VCE=10V, IC=500mA 20 fT VCE=10V, IC=50mA, f=20MHz 60 Cob VCB=10V, IE=0, f=1.0MHz 30 ton VCE=30V, IC=150mA, IB1=IB2=15mA 110 toff VCE=30V, IC=150mA, IB1=IB2=15mA 700 2N4037 60 40 7.0 1.0 0.5 5.0 1.0 -65 to +200 35 2N4037 MIN MAX 0.25 100 1.0 40 1.4 1.5 15 50 60 - 250 30 - UNITS V V V A A W W °C °C/W UNITS µA µA µA mA µA µA V V V V MHz pF ns ns R1 (1-April 2010) 2N4036 2N4037 PNP SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (1-April 2010) w w w. c e n t r a l s e m i . c o m