ISC 2SB1193

Inchange Semiconductor
Product Specification
2SB1193
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・High DC current gain
・High speed switching
・DARLINGTON
・Complement to type 2SD1773
APPLICATIONS
・For medium speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector -emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-8
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1193
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-2A; RBE=∞;L=10mH
V(BR)EBO
Emitter-base breakdown voltage
IE=-50mA; IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=-4A ;IB=-8mA
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-8A ;IB=-80mA
-3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=-4A ;IB=-8mA
-2.0
V
VBEsat-2
Base-emitter saturation voltage
IC=-8A ;IB=-80mA
-3.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-100
μA
ICEO
Collector cut-off current
VCE=-100V; RBE=∞
-10
μA
hFE
DC current gain
IC=-4A ; VCE=-3V
-120
V
-7
V
1000
20000
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-4A ;IB1=-IB2=-8mA
VCC=-50V
Fall time
2
0.7
μs
3.5
μs
2.0
μs
Inchange Semiconductor
Product Specification
2SB1193
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3