Inchange Semiconductor Product Specification 2SD1277 2SD1277A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB951/951A ・High DC current gain ・High-speed switching APPLICATIONS ・For medium speed power switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD1277 VCBO Collector-base voltage 60 Open base 2SD1277A VEBO Emitter-base voltage IC V 80 2SD1277 Collector-emitter voltage UNIT 60 Open emitter 2SD1277A VCEO VALUE V 80 Open collector 7 V Collector current (DC) 8 A ICM Collector current-Peak 12 A PC Collector power dissipation TC=25℃ 45 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1277 2SD1277A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1277 MIN TYP. MAX UNIT 60 IC=30mA , IB=0 V 80 2SD1277A VCEsat Collector-emitter saturation voltage IC=4A; IB=8mA 1.5 V VBEsat Base-emitter saturation voltage IC=4A ;IB=8mA 2 V 0.1 mA 2 mA ICBO Collector cut-off current 2SD1277 VCB=60V ;IE=0 2SD1277A VCB=80V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=8A ; VCE=3V 500 hFE-2 DC current gain IC=4A ; VCE=3V 2000 Transition frequency IC=0.5A; VCE=10V;f=1MHz fT 10000 20 MHz Switching times ton Turn-on time tstg Storage time Fall time tf IC=4A ;IB1=8mA IB2=-8mA;VCC=50V hFE-2 Classifications Q R 2000-5000 4000-10000 2 0.5 μs 4.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SD1277 2SD1277A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3