ISC 2SD970

Inchange Semiconductor
Product Specification
2SD970
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High DC current gain
・DARLINGTON
・Complement to type 2SB791
APPLICATIONS
・For medium speed and power
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
8
A
ICM
Collector current-peak
12
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD970
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;RBE=0
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA ; IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=4A ;IB=8mA
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A ;IB=80mA
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=4A ;IB=8mA
2.0
V
VBEsat-2
Base-emitter saturation voltage
IC=8A ;IB=80mA
3.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
100
μA
ICEO
Collector cut-off current
VCE=100V; RBE=∞
10
μA
hFE
DC current gain
IC=4A ; VCE=3V
120
V
7
V
1000
20000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A ;IB1=-IB2=8mA
2
0.4
μs
5.4
μs
1.1
μs
Inchange Semiconductor
Product Specification
2SD970
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3