Inchange Semiconductor Product Specification 2SD970 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Complement to type 2SB791 APPLICATIONS ・For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 12 A PC Collector dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD970 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;RBE=0 V(BR)EBO Emitter-base breakdown voltage IE=50mA ; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=8mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=4A ;IB=8mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=8A ;IB=80mA 3.5 V ICBO Collector cut-off current VCB=120V; IE=0 100 μA ICEO Collector cut-off current VCE=100V; RBE=∞ 10 μA hFE DC current gain IC=4A ; VCE=3V 120 V 7 V 1000 20000 Switching times ton Turn-on time ts Storage time tf Fall time IC=4A ;IB1=-IB2=8mA 2 0.4 μs 5.4 μs 1.1 μs Inchange Semiconductor Product Specification 2SD970 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3