Inchange Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High voltage,high speed APPLICATIONS ・For high speed and high voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage IN Emitter-base voltage CONDITIONS VALUE UNIT 500 V Open base 400 V Open collector 10 V C I M E SE G N A CH Collector-emitter voltage OND R O T UC Open emitter IC Collector current 0.5 A ICM Collector current-peak 1.0 A PC Ta=25℃ 0.75 TC=25℃ 10 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBE=∞,L=100mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=250mA; IB=50m A 1.0 V VBEsat Base-emitter saturation voltage IC=250mA ;IB=50m A 1.5 V hFE-1 DC current gain IC=250mA ; VCE=5V 15 hFE-2 DC current gain IC=500mA ; VCE=5V 7 ICBO Collector cut-off current VCB=400V; IE=0 20 μA ICEO Collector cut-off current ton tstg tf 体 导 半 固电 Switching times Turn-on time VCE=350V; RBE=∞ EM S E NG A H C IN Storage time CONDITIONS 2 TYP. MAX R O T UC D N O IC IC=0.5A; IB1=-IB2=0.1A VCC≈150V Fall time MIN UNIT 50 μA 1.0 μs 2.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC