2N7002FN3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Unit : inch(mm) DFN 3L FEATURES 0.042(1.05) 0.037(0.95) 0.026(0.65) 0.021(0.55) • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), [email protected],IDS@50mA=7.5Ω 0.0 22 (0.55) 0.047(0.45) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • In compliance with EU RoHS 2002/95/EC directives 0.013(0.32) 0.008(0.22) MECHANICAL DATA 0.002(0.05) MAX. 0.013(0.32) 0.008(0.22) 0.014(0.36) • Marking: AH 3 2 0.004(0.10) 0.0 08 (0.20) 0.004(0.10) 0.0 08 (0.20) • Terminals: Solderable per MIL-STD-750, Method 2026 0.0 14 (0.20) 0.022(0.55) 0.047(0.45) • Case: DFN 3L, Plastic 1 Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V DS 60 V Gats-Source Voltage V GS +20 V Continous Drain Current I D 115 mA DM 800 mA mW Pulsed Drain Current (1) I Maximum Power Dissipation PD 150 Junction-to Ambient Thermal Resistance (PCB mounted)2 RθJA 883 T J , T S TG -55 to +150 O p e ra t i ng J unc t i o n a nd S t o ra g e Te mp e r a tur e Ra ng e o C/W o C Note 1 : Maximum DC current limited by the package 2 : Surface mounted on FR4 board,t<10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DSEIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE September 03.2010-REV.00 PAGE . 1 2N7002FN3 ELECTRICAL CHARACTERISTICS PAR AME T E R S YMB OL T E S T C ON D IT ION MIN . T YP. MAX . U N IT S 60 - - V 1 - 2 .5 V S t a tic D r a i n- S o urc e B re a k d o wn Vo lta g e B V DSS V GS =0 V, I Ga te Thr e s ho ld Vo lta g e V GS ( th ) V D S =V G S , I D r a i n- S o urc e On-S ta te Re s i s ta nc e R D S ( O N) V GS =4 .5 V, I D = 5 0 mA - - 7 .5 D r a i n- S o urc e On-S ta te Re s i s ta nc e R D S ( O N) V GS =1 0 V, I D =5 0 0 m A - - 5 D=10mA D = 2 5 0 mA W Ze ro Ga te Vo lta g e D ra i n C ur re nt I DSS V D S =6 0 V,V G S = 0 V - - 1 mA Ga te B o d y L e a k a g e I GS S V GS =+ 2 0 V,V D S = 0 V - - +100 nA 100 - - mS - 0 .6 0 .7 - 0 .1 - - 0 .0 8 - - 9 15 F o rwa r d Tr a ns c o nd uc ta nc e gFS V D S =1 5 V, I D =2 5 0 m A D y n a m ic To ta l Ga te C ha r g e QG Ga te -S o urc e C ha rg e QGS Ga te -D ra i n C ha r g e Q GD Turn-On D e la y Ti m e TO N V D S =1 5 V, I D =5 0 0 m A , V GS = 4 . 5 V nC V D D = 1 0 V,R L = 2 0 W I D = 5 0 0 m A ,V GE N = 1 0 V,R G = 1 0 W ns Turn-Off D e la y Ti m e t OFF - 21 26 Inp ut C a p a c i ta nc e C IS S - - 50 Outp ut C a p a c i ta nc e C OS S - - 25 Re ve rs e Tra ns fe r C a p a c i ta nc e C RS S - - 5 - - 11 5 - 0 .9 3 1 .2 V D S =2 5 V, V G s = 0 V, f= 1 .0 M Hz pF S o u rc e - D r a in D io d e M a x.D i o d e F o r wa r d C ur re nt I D i o d e F o re a rd Vo lta g e - S V SD I S = 2 5 0 mA ,V GS = 0 V VDD Switching Test Circuit VIN VDD Gate Charge Test Circuit RL mA VGS RL VOUT RG 1mA RG September 03.2010-REV.00 PAGE . 2 2N7002FN3 MOUNTING PAD LAYOUT DFN 3L 0.043 (1.10) 0.010 (0.26) 0.010 (0.25) 0.024 (0.60) 0.02 8 (0.70) 0.004 (0.10) 0.017 (0.42) 0.02 7 (0.68) ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. September 03.2010-REV.00 PAGE . 3