VS-20CTH03PbF, VS-20CTH03FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AB • Low leakage current TO-220 FULL-PAK • Fully isolated package (VINS = 2500 VRMS) Base common cathode 2 • UL E78996 pending • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 qualified (TO-220) 2 Common cathode 1 Anode • Designed and qualified for industrial level (TO-220FP) 2 Common cathode 3 Anode 3 Anode 1 Anode VS-20CTH03PbF DESCRIPTION/APPLICATIONS 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. VS-20CTH03FPPbF PRODUCT SUMMARY Package TO-220AB, TO-220FP IF(AV) 2 x 10 A VR 300 V VF at IF 1.25 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VALUES UNITS 300 V VRRM TC = 160 °C per diode (FULL-PAK) per diode Average rectified forward current IF(AV) 10 TC = 135 °C per device Non-repetitive peak surge current IFSM TJ = 25 °C 120 TJ, TStg Operating junction and storage temperatures A 20 - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance Series inductance Document Number: 94010 Revision: 28-Apr-11 TEST CONDITIONS MIN. TYP. MAX. 300 - - IF = 10 A - 1.05 1.25 IF = 10 A, TJ = 125 °C - 0.85 0.95 IR = 100 μA UNITS V VR = VR rated - - 20 TJ = 125 °C, VR = VR rated - 6 200 CT VR = 300 V - 30 - pF LS Measured lead to lead 5 mm from package body - 8 - nH μA For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03PbF, VS-20CTH03FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - - 35 - - 30 TJ = 25 °C - 31 - - 42 - Reverse recovery charge IF = 10 A dIF/dt = 200 A/μs VR = 200 V TJ = 25 °C IRRM TJ = 125 °C Qrr MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C Peak recovery current TYP. - 2.4 - - 5.6 - UNITS ns A TJ = 25 °C - 36 - TJ = 125 °C - 120 - MIN. TYP. MAX. UNITS - 65 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case TEST CONDTIONS TJ, TStg per diode RthJC (FULL-PAK) per diode Mounting surface, flat, smooth and greased - - 1.5 - - 3.9 Case style TO-220AB Marking device °C/W 20CTH03 Case style TO-220 FULL-PAK 20CTH03FP 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 50 100 150 200 250 300 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 94010 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03PbF, VS-20CTH03FPPbF Hyperfast Rectifier, 2 x 10 A FRED Pt® Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 50 0 100 150 200 250 300 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 0.1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 . 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Document Number: 94010 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03PbF, VS-20CTH03FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® 20 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC Square wave (D = 0.50) Rated VR applied 160 150 RMS limit 12 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 8 4 DC See note (1) 140 0 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 8 - Forward Power Loss Characteristics 180 100 IF = 10 A 170 160 DC 150 TJ = 125 °C trr (ns) Allowable Case Temperature (°C) 16 140 TJ = 25 °C 130 120 Square wave (D = 0.50) Rated VR applied 110 See note (1) VR = 200 V 100 0 2 4 6 8 10 12 14 10 100 16 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt 1000 Qrr (nC) IF = 10 A TJ = 125 °C 100 TJ = 25 °C VR = 200 V 10 100 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 94010 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03PbF, VS-20CTH03FPPbF Hyperfast Rectifier, 2 x 10 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 94010 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03PbF, VS-20CTH03FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- 20 C T H 03 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - C = Common cathode 4 - T = TO-220, D2PAK 5 - H = Hyperfast recovery 6 - Voltage rating (03 = 300 V) 7 - None = TO-220AB 8 - PbF = Lead (Pb)-free FP = TO-220 FULL-PAK Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com 6 TO-220AB www.vishay.com/doc?95222 TO-220AB FULL-PAK www.vishay.com/doc?95072 TO-220AB www.vishay.com/doc?95225 TO-220AB FULL-PAK www.vishay.com/doc?95069 For technical questions within your region, please contact one of the following: Document Number: 94010 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.61 0.38 0.9 0.7 2.54 TYP. R 0.7 (2 places) R 0.5 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments 4.8 4.6 Diodes 1. - Anode/open 2. - Cathode 3. - Anode 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95072 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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