VISHAY ETH3006STRR-M3

New Product
VS-ETH3006S-M3, VS-ETH3006-1-M3
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
VS-ETH3006S-M3
VS-ETH3006-1-M3
Base
cathode
2
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
2
• Designed and qualified according to JEDEC-JESD47
DESCRIPTION/APPLICATIONS
N/C
D2PAK
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
3
Anode
1
N/C
3
Anode
1
TO-262
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
TO-263AB (D2PAK), TO-262AA
Package
IF(AV)
30 A
VR
600 V
VF at IF
2.65 V
trr (typ.)
27 ns
TJ max.
175 °C
Diode variation
Single die
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 95 °C
30
Non-repetitive peak surge current
IFSM
TC = 25 °C
180
Operating junction and storage
temperatures
TJ, TStg
A
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
2.0
2.65
IF = 30 A, TJ = 150 °C
-
1.4
1.8
VR = VR rated
-
0.02
30
TJ = 150 °C, VR = VR rated
-
50
300
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
20
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
Document Number: 93574
Revision: 21-Apr-11
μA
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETH3006S-M3, VS-ETH3006-1-M3
Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
26
35
TJ = 25 °C
-
26
-
TJ = 125 °C
UNITS
ns
-
70
-
-
3.5
-
-
7.6
-
TJ = 25 °C
-
50
-
TJ = 125 °C
-
280
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case
RthJC
-
0.95
1.4
°C/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
-
0.5
-
-
2.0
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
6
(5)
Mounting torque
Marking device
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Case style D2PAK modified
ETH3006S
Case style TO-262
ETH3006-1
g
For technical questions within your region, please contact one of the following:
Document Number: 93574
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Revision: 21-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETH3006S-M3, VS-ETH3006-1-M3
Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors
1000
1000
175 °C
Reverse Current - IR (μA)
100
125 °C
10
100 °C
1
75 °C
0.1
50 °C
0.01
25 °C
0.001
TJ = 175 °C
0.0001
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
TJ = 150 °C
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
100
150 °C
TJ = 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
100
10
1
3.5
0
100
Forward Voltage Drop - VFM (V)
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
Single Pulse
(Thermal Resistance)
D = 0.01
0.01
1E-051
E-041
E-031
E-021
E-01
1E+00
t1, Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Document Number: 93574
Revision: 21-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETH3006S-M3, VS-ETH3006-1-M3
Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt®
80
180
RMS Limit
160
Average Power Loss (W)
Allowable Case Temperature (°C)
170
150
140
130
120
DC
110
100
90
60
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
40
20
80
0
70
0
5
10
15
20
25
30
35
40
0
45
5
10
15
20
25
30
35
40
Average Forward Current - IF(AV) (A)
Average Forward Current - IF(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
45
900
90
800
80
700
IF = 30 A, 125 °C
70
600
IF = 30 A, 125 °C
60
trr (nC)
trr (ns)
500
50
40
400
300
IF = 30 A, 25 °C
30
200
IF = 30 A, 25 °C
10
20
typical value
typical value
10
100
1000
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
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0
100
1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
For technical questions within your region, please contact one of the following:
Document Number: 93574
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Revision: 21-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETH3006S-M3, VS-ETH3006-1-M3
Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93574
Revision: 21-Apr-11
For technical questions within your region, please contact one of the following:
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-ETH3006S-M3, VS-ETH3006-1-M3
Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt®
ORDERING INFORMATION TABLE
Device code
VS-
E
T
H
30
06
S
1
2
3
4
5
6
7
TRL -M3
8
9
1
-
Vishay Semiconductors product
2
-
3
-
Circuit configuration
E = Single diode
T = TO-220
4
-
H = Hyperfast recovery time
5
-
Current code (30 = 30 A)
6
-
Voltage code (06 = 600 V)
7
-
• S = D2PAK
-
• -1 = TO-262
-
• None = Tube (50 pieces)
-
• TRL = Tape and reel (left oriented, for D2PAK package)
-
• TRR = Tape and reel (right oriented, for D2PAK package)
-
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
8
9
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-ETH3006S-M3
50
1000
Antistatic plastic tube
VS-ETH3006-1-M3
50
1000
Antistatic plastic tube
VS-ETH3006STRR-M3
800
800
13" diameter reel
VS-ETH3006STRL-M3
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com
6
TO-263AB (D2PAK)
www.vishay.com/doc?95046
TO-262AA
www.vishay.com/doc?95419
TO-263AB (D2PAK)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
TO-263AB (D2PAK)
www.vishay.com/doc?95032
For technical questions within your region, please contact one of the following:
Document Number: 93574
[email protected], [email protected], [email protected]
Revision: 21-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
H
2x e
Base
Metal
(4)
b1, b3
Gauge
plane
Seating
plane
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
4
e
0.100 BSC
H
14.61
15.88
0.575
0.625
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
L2
1.27
1.78
0.050
0.070
L3
2
2.54 BSC
L4
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
2
0.100 BSC
13.46
14.10
L1
-
L2
3.56
0.530
0.555
1.65
-
0.065
3.71
0.140
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
Document Number: 95419
Revision: 04-Oct-10
4
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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