VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A Fred Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AC • Low leakage current TO-220 FULL-PAK • Single die center tap module Base cathode 2 • Fully isolated package (VINS = 2500 VRMS) • UL E78996 pending • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 1 Cathode 1 Cathode 3 Anode VS-15ETH06PbF VS-15ETH06-N3 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) 3 Anode VS-15ETH06FPPbF VS-15ETH06FP-N3 DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package TO-220AC, TO-220FP IF(AV) 15 A VR 600 V VF at IF 2.2 V trr typ. 22 ns TJ max. 175 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VALUES UNITS 600 V VRRM TC = 140 °C 15 Average rectified forward current IF(AV) Non-repetitive peak surge current IFSM Peak repetitive forward current IFM 30 TJ, TStg - 65 to 175 Operating junction and storage temperatures TC = 80 °C (FULL-PAK) TJ = 25 °C 120 TJ = 25 °C (FULL-PAK) 180 A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance Series inductance Revision: 02-Jan-12 TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 15 A - 1.8 2.2 IF = 15 A, TJ = 150 °C - 1.3 1.6 UNITS V VR = VR rated - 0.2 50 TJ = 150 °C, VR = VR rated - 30 500 CT VR = 600 V - 20 - pF LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Document Number: 94002 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 22 30 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 28 35 TJ = 25 °C - 29 - TJ = 125 °C Peak recovery current Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge ns - 75 - - 3.5 - - 7 - TJ = 25 °C - 57 - TJ = 125 °C - 300 - - 51 - ns - 20 - A - 580 - nC MIN. TYP. MAX. UNITS - 65 - 175 °C IF = 15 A dIF/dt = 200 A/μs VR = 390 V TJ = 25 °C IRRM UNITS TJ = 125 °C IF = 15 A dIF/dt = 800 A/μs VR = 390 V TJ = 125 °C Qrr A nC THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case TEST CONDITIONS TJ, TStg (FULL-PAK) RthJC - 1.0 1.3 - 3.0 3.5 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Case style TO-220AC Marking device 15ETH06 Case style TO-220 FULL-PAK 15ETH06FP 1000 100 TJ = 175 °C TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 1 0.5 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) °C/W 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.001 0 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 02-Jan-12 Document Number: 94002 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 10 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 10 1 PDM Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Revision: 02-Jan-12 Document Number: 94002 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3 Vishay Semiconductors 180 35 170 30 160 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 150 Square wave (D = 0.50) 80 % rated Vr applied 140 130 120 See note (1) 110 RMS limit 20 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 15 10 DC 5 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 8 - Forward Power Loss Characteristics 100 180 IF = 30 A 160 IF = 15 A 80 140 DC 120 trr (ns) Allowable Case Temperature (°C) 25 100 Square wave (D = 0.50) 80 % rated Vr applied 80 60 40 60 40 20 20 See note (1) 0 100 0 0 4 8 12 16 20 VR = 390 V TJ = 125 °C TJ = 25 °C 24 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt 1000 800 VR = 390 V TJ = 125 °C TJ = 25 °C IF = 30 A Qrr (nC) IF = 15 A 600 400 200 0 100 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 02-Jan-12 Document Number: 94002 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Revision: 02-Jan-12 Document Number: 94002 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 E T H 06 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (15 = 15 A) 3 - E = Single diode 4 - T = TO-220, D2PAK 5 - H = Hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - None = TO-220AC 8 - Environmental digit: FP = TO-220 FULL-PAK PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-15ETH06PbF 50 1000 Antistatic plastic tube VS-15ETH06-N3 50 1000 Antistatic plastic tube VS-15ETH06FPPbF 50 1000 Antistatic plastic tube VS-15ETH06FP-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 02-Jan-12 TO-220AC www.vishay.com/doc?95221 TO-220FP www.vishay.com/doc?95005 TO-220ACPbF www.vishay.com/doc?95224 TO-220AC-N3 www.vishay.com/doc?95068 TO-220FPPbF www.vishay.com/doc?95009 TO-220FP-N3 www.vishay.com/doc?95440 Document Number: 94002 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000