SavantIC Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Low collector saturation voltage APPLICATIONS ·For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 12 V IC Collector current 5.0 A ICM Collector current-peak 10 A IB Base current 2.5 A TC=25 50 W PC Collector power dissipation Derate above 25 0.4 W/ Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A ;IB1=0.3A;L=1.0mH VCEsat Collector-emitter saturation voltage IC=3A ;IB=300mA 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=300mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA ICEX Collector cut-off current VCE=100V;VBE=-1.5V 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.3A ; VCE=5V 60 hFE-2 DC current gain IC=3A ; VCE=5V 40 100 UNIT V 320 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A; VCC=30V IB1=0.3A ,IB2=-0.3A RL=10@ hFE-1 Classifications M L K 60-120 100-200 160-320 2 0.5 µs 2.0 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2908 SavantIC Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors 4