SavantIC Semiconductor Product Specification 2SC5382 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High Voltage ·High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A IBM Base current-peak 6 A PT Total power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX UNIT 3.13 /W SavantIC Semiconductor Product Specification 2SC5382 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6 A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6 A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 0.1 mA ICEO Collector cut-off current VCE=550V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=3A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 10 1.3 µs 4.0 µs 0.3 µs 550 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=3A;IB1=0.6A ;IB2=1.2A RL=50>;VBB2=4V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC5382