2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.5 W 10 Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA Weight: 0.82 g (typ.) Electrical Characteristics (Tc = 25°C) Characteristics 2-8H1A Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 640 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 10 µA DC current gain hFE VCE = 5 V, IC = 7 mA 15 ― ― Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 4 mA ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 20 mA, IB = 4 mA ― ― 1.5 V Transition frequency Collector output capacitance fT VCE = 10 V, IC = 3 mA ― 5.5 ― MHz Cob VCB = 100 V, f = 1 MHz ― 2.2 ― pF Note: When an external heat sink is used for the device, insulate using, for example, silicone rubber. When an external heat sink is not used, Toshiba recommends that the plastic part be at least 2 mm away from its surroundings. 1 2004-07-26 2SC5460 Marking Lot No. C5460 Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5460 IC – VCE IC – VBE 100 10 9 Common emitter 80 Tc = 25°C 5 4 60 Collector current IC (mA) Collector current IC Common emitter 8 7 6 Tc = 25°C (mA) 100 3 2 40 1 20 IB = 0.5 mA 0 0 4 8 12 16 Collector-emitter voltage 20 VCE 80 60 40 Tc = 100°C 0 0 24 0.2 (V) 0.4 0.6 −55 0.8 Base-emitter voltage VCE (sat) – IC VBE 1 1.2 (V) VBE (sat) – IC 10 10 Common emitter Common emitter IC/IB = 5 Base-emitter saturation voltage VBE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) 25 20 3 1 0.3 Tc = 100°C −55 0.1 0.03 0.1 25 0.3 1 3 Collector current 10 30 IC/IB = 5 3 Tc = 100°C 0.3 0.1 0.03 0.1 100 25 −55 1 IC (mA) 0.3 1 3 Collector current 30 10 100 IC (mA) Cob – VCB hFE – IC 1000 30 Collector output capacitance Cob (pF) DC current gain hFE Tc = 25°C 100 Tc = 100°C 25 10 −55 Common emitter IE = 0 f = 1MHz 10 5 3 VCE = 5 V 1 0.01 0.1 1 Collector current 10 1 1 1000 IC (mA) 3 10 Collector-base voltage 3 30 100 VCB (V) 2004-07-26 2SC5460 Safe Operating Area 300 IC max (pulsed)* Collector current IC (mA) 100 50 1 ms* 10 ms* IC max (continuous) 30 DC operation Tc = 25°C 10 5 3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in VCEO max temperature. 1 10 30 50 100 Collector-emitter voltage 300 VCE 500 1000 (V) 4 2004-07-26 2SC5460 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26