2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 20 W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3474 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 µA V (BR) CEO V IC = 10 mA, IB = 0 80 ― ― hFE VCE = 1 V, IC = 400 mA 500 ― ― Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 1 mA ― 0.3 0.5 Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 1 mA ― ― 1.1 V fT VCE = 2 V, IC = 100 mA ― 85 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 50 ― pF ― 2 ― ― 5 ― ― 2 ― DC current gain Transition frequency Collector output capacitance Cob Turn-on time ton 20 µs IB1 Switching time Storage time tstg Fall time tf IB1 INPUT IB2 IB2 IB1 = −IB2 = 1 mA, DUTY CYCLE ≤ 1% OUTPUT 100 Ω Collector-emitter breakdown voltage V µs VCC = 30 V Marking C3474 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3474 IC – VCE VCE – IC 2.0 2.0 2.0 Common emitter 1.6 (V) VCE 1 1.2 0.8 0.6 0.8 0.4 0.4 Tc = 25°C IB = 0.5 mA 1.6 1.2 Collector-emitter voltage IC (A) Collector current Common emitter 1.6 Tc = 25°C IB = 0.2 mA 1 2 4 8 10 6 12 16 1.2 20 0.8 0.4 0 0 0 2 4 6 8 Collector-emitter voltage 10 VCE 0 0 12 0.4 0.8 1.2 1.6 VCE – IC VCE – IC 2.0 2 4 6 8 10 12 16 (V) 1.6 20 Collector-emitter voltage Collector-emitter voltage VCE IB = 0.5 mA 1 Common emitter Tc = 100°C 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 2.0 2 1 16 20 0.4 0.4 0.8 500 300 100 50 30 0.01 0.03 0.1 0.3 1 5 Collector-emitter saturation voltage VCE (sat) (V) hFE Tc = 100°C 25 1.2 1.6 2.0 2.4 VCE (sat) – IC VCE = 1 V −55 10 Collector current IC (A) Common emitter 1000 8 0.8 hFE – IC 3000 6 12 Collector current IC (A) 5000 4 1.2 0 0 2.4 Tc = −55°C IB = 0.5 mA VCE (V) Common emitter DC current gain 2.4 Collector current IC (A) (V) 2.0 1.6 2.0 3 Collector current IC (A) IC/IB = 300 1 0.5 0.3 Tc = 100°C 25 −55 0.1 0.05 0.03 0.01 3 Common emitter 0.03 0.1 0.3 1 3 Collector current IC (A) 3 2005-02-01 2SC3474 VBE (sat) – IC IC – VBE 5 2.0 IC/IB = 300 IC (A) 1 Tc = −55°C 0.5 100 Common emitter VCE = 1 V Collector current Base-emitter saturation voltage VBE (sat) (V) Common emitter 3 25 0.3 1.6 1.2 0.8 0.4 0.1 0.01 0.03 0.1 0.3 1 Tc = 100°C 25 0.2 0.6 −55 2 0 0 Collector current IC (A) 0.4 0.8 Base-emitter voltage Safe Operating Area IC max (pulsed)* PC (W) 100 µs* 1 ms* IC (A) Collector current Collector power dissipation 10 ms* 1 DC operation Tc = 25°C 0.5 0.3 0.1 0.03 Tc = 25°C with increase in temperature. 3 20 (V) (1) Tc = Ta infinite heat sink (2) Mounted on a ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink (1) 16 12 8 4 (2) (3) 0 0 *: Single nonrepetitive pulse 25 50 75 100 Ambient temperature Curves must be derated linearly 0.01 1 1.4 24 IC max (continuous) 0.05 VBE 1.2 PC – Ta 5 3 1.0 125 Ta 150 175 (°C) VCEO max 10 Collector-emitter voltage 30 VCE 100 (V) 4 2005-02-01 2SC3474 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01