2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.) • Complementary to 2SA1761 (IC = 1.5 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V IC 3 A Collector current Base current IB 0.6 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA Storage temperature range JEDEC TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 0.1 µA V (BR) CEO V Collector-emitter breakdown voltage DC current gain IC = 10 mA, IE = 0 50 ― ― hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 hFE (2) VCE = 2 V, IC = 2 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1.5 A, IB = 75 mA ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1.5 A, IB = 75 mA ― ― 1.2 V VCE = 2 V, IC = 100 mA ― 100 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF ― 0.1 ― ― 0.5 ― ― 0.1 ― Collector output capacitance Cob ton 20 µs Input IB1 Turn-on time fT Storage time tstg IB2 Switching time IB1 IB2 Output 30 Ω Transition frequency µs 30 V Fall time tf IB1 = −IB2 = 75 mA, duty cycle ≤ 1% 1 2004-07-26 2SC4604 Marking C4604 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC4604 IC – VCE IC – VBE 5 70 Common emitter 50 30 20 15 2 Collector current Collector current VCE = 2 V IC (A) 100 IC (A) 3 10 1 IB = 5 mA Common emitter Ta = 25°C 0 0 1 2 3 Collector-emitter voltage 3 2 Ta = 100°C 25 −25 1 0 0 4 VCE 4 0.4 (V) 0.8 Base-emitter voltage −25 25 50 30 Common emitter 10 5 1m VCE = 2 V 3m 10 m 30 m 100 m 300 m VBE 2.0 (V) VCE (sat) – IC Ta = 100°C 100 1.6 10 1 3 10 Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE hFE – IC 500 300 1.2 Common emitter 5 3 IC/IB = 20 1 50 m 30 m Ta = 100°C −25 10 m 1m 3m 10 m 25 30 m 100 m 300 m Collector current IC 1 3 10 (A) Safe Operating Area 10 Collector current IC (A) Base-emitter saturation voltage VBE (sat) (V) 5 VBE (sat) – IC 10 5 3 Common emitter IC/IB = 20 Ta = −25°C 1 500 m 300 m 100 m 1m 100 3m 10 m 25 30 m 100 m 300 m 1 3 3 IC max (pulsed)* Collector current IC (A) 10 ms* 100 ms* 1 1 s* 0.5 0.3 DC operation Ta = 25°C 0.1 0.05 0.03 0.01 0.03 10 1 ms* IC max (continuous) *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.3 1 VCEO max 3 Collector-emitter voltage 3 10 30 100 VCE (V) 2004-07-26 2SC4604 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-26