ISC 2SC792

Inchange Semiconductor
Product Specification
2SC792
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High breakdown voltage
APPLICATIONS
・For voltage regulator,inverter,switching
mode power supply applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
1.5
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC792
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A; IB=0.3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=300V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE
DC current gain
IC=0.3A ; VCE=10V
Transition frequency
IC=0.1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
30
MAX
UNIT
200
10
MHz
Inchange Semiconductor
Product Specification
2SC792
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3