Inchange Semiconductor Product Specification 2SC2307 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol R O T UC Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO 体 导 半 D N O IC MAX UNIT Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 7 V 12 A 100 W 固电 PARAMETER CONDITIONS EM S E NG Collector-base voltage A H C IN IC Collector current (DC) PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2307 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=7A; IB=1.4A 0.5 V VBEsat Base-emitter saturation voltage IC=7A; IB=1.4A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain fT 体 导 半 固电 Transition frequency CONDITIONS IC=7A ; VCE=4V A H C IN 2 TYP. MAX R O T UC UNIT 10 D N O IC IC=1A ; VCE=12V EM S E NG MIN 18 MHz Inchange Semiconductor Product Specification 2SC2307 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3