Inchange Semiconductor Product Specification 2SD748 2SD748A Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High VCBO ·High power dissipation APPLICATIONS ·Low frequency power amplifier regulator for TV power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD748 Emitter-base voltage UNIT 250 V 200 Open base 2SD748A VEBO VALUE V 250 Open collector 5 V IC Collector current 3 A IB Base current 1 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SD748 2SD748A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD748 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 200 IC=10mA ;RBE=∞ 2SD748A V(BR)EBO MIN V 250 Emitter-base breakdown voltage IE=5mA ;IC=0 Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=200V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V VCEsat 2 5 25 V 200 Inchange Semiconductor Product Specification 2SD748 2SD748A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3