ISC 2SC1106

Inchange Semiconductor
Product Specification
2SC1106
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High power dissipation
・High breakdown voltage
APPLICATIONS
・For voltage regulator ,inverter and switching
mode power supply applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
350
V
VCEO
Collector-emitter voltage
Open base
250
V
VEBO
Emitter-base voltage
Open collector
6
V
2
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1106
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
250
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
350
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A; IB=0.3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=350V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=0.2A ; VCE=5V
2
MIN
30
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC1106
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3