To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC4647 Silicon NPN Triple Diffused Application High voltage amplifier Features • High break down voltage V(BR)CEO = 300 V min. Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4647 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 300 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 300 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 1.0 µA VCB = 250 V, RBE = ∞ DC current transfer ratio hFE 30 — 200 Collector to emitter saturation voltage VCE(sat) — — 1.5 V I C = 20 mA, IB = 2 mA Gain bandwidth product fT 50 — — MHz VCE = 20 V, IC = 20 mA Collector output capacitance Cob — — 4.0 pF VCE = 20 V, IE = 0, f = 1 MHz 2 VCE = 20 V, IC = 20 mA 2SC4647 Typical Output Characteristics 1.0 600 16 14 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 400 200 0.8 12 0.6 10 8 0.4 6 0.2 2 µA 4 IB = 0 50 100 Ambient Temperature Ta (°C) 0 0 150 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 100 100 VCE = 20 V 50 20 10 5 2 1 DC Current Transfer Ratio hFE Collector Current IC (mA) 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage VCE (V) Ta = 75°C 80 VCE = 20 V Pulse 25 –25 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SC4647 Gain Bandwidth Product vs. Collector Current 100 10 IC = 10 IB Pulse 5 2 Ta = 75°C 25 1.0 –25 0.5 0.2 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation vs. Collector Current VCE = 20 V 80 60 40 20 0 0.1 1 2 5 10 20 50 Collector Current IC (mA) 100 1 2 5 10 20 50 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 1 4 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 100 2SC4647 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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