To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SD755 2SD756 2SD756A Unit Collector to base voltage VCBO 100 120 140 V Collector to emitter voltage VCEO 100 120 140 V Emitter to base voltage VEBO 5 5 5 V Collector current IC 50 50 50 mA Collector power dissipation PC 750 750 750 mW Junction temperature Tj 150 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SD755 2SD756 2SD756A Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO 100 — — 120 — — 140 — — V IC = 1 mA, RBE = ∞ Collector to base breakdown voltage V(BR)CBO 100 — — 120 — — 140 — — V IC = 10 µA, IE = 0 Collector cutoff current ICBO — — 0.5 — — 0.5 — — 0.5 µA VCB = 100 V, I E = 0 250 — 1200 250 — 800 250 — 500 VCE = 12 V, IC = 2 mA hFE2 125 — — 125 — — 125 — — VCE = 12 V, IC = 10 mA Base to emitter voltage VBE — — 0.75 — 0.75 — — 0.75 V VCE = 12 V, IC = 2 mA Collector to emitter saturation voltage VCE(sat) — — 0.2 — — 0.2 — — 0.2 V IC = 10 mA, IB = 1 mA Gain bandwidth product fT — 350 — — 350 — — 350 — MHz VCE = 12 V, IC = 5 mA Collector output capacitance — 1.6 — — 1.6 — — 1.6 — pF DC current transfer ratio hFE1* Note: 1 Cob 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows. D E F 2SD755 250 to 500 400 to 800 600 to 1200 2SD756 250 to 500 400 to 800 — 2SD756A 250 to 500 — — 2 VCB = 25 V, IE = 0, f = 1 MHz 2SD755, 2SD756, 2SD756A Typical Output Characteristics 10 750 10 µA Collector Current IC (mA) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 500 250 8 8 6 6 4 4 2 2 IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) 10 20 30 40 50 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 3 1.0 1,200 VCE = 12 V VCE = 12 V Ta = 100°C 75 50 25 0 –25 0.3 0.1 0.03 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE Collector Current IC (mA) 10 1,000 Ta = 800 100°C 75 50 25 600 0 –25 400 200 0 0.01 0.03 0.1 0.3 1.0 3 Collector Current IC (mA) 10 30 3 Gain Bandwidth Product fT (MHz) 2SD755, 2SD756, 2SD756A Gain Bandwidth Product vs. Collector Current 1,000 300 100 VCE = 12 V 30 10 0.01 0.03 0.1 0.3 1.0 3 Collector Current IC (mA) 100 f = 1 MHz IE = 0 20 10 5 2 1.0 IC (max) (DC Operation) Pc 50 = 75 0 m W 20 Ta = 25°C (50 V, 15 mA) 10 5 (100 V, 6 mA) (120 V, 5 mA) 2 (140 V, 4 mA) 2SD755 2SD756 2SD756A 1 0.5 1 4 30 Area of Safe Operation 50 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 10 3 10 30 100 Collector to Base Voltage VCB (V) 5 10 20 50 100 200 500 Collector to Emitter Voltage VCE (V) 2SD755, 2SD756, 2SD756A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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