Inchange Semiconductor Product Specification 2SD1649 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Built-in damper diode ・High voltage ,high speed APPLICATIONS ・For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2.5 A ICM Collector current-peak 10 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1649 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 7 V V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V VF Diode forward voltage IF=2.5A 2.0 V Fall time IC=2A;IB1=0.6A;IB2=-1.2A VCC=200V;RL=100Ω 0.4 μs tf 2 3 MHz Inchange Semiconductor Product Specification 2SD1649 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3