Inchange Semiconductor Product Specification 2SD2089 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P(H)IS package ・Built-in damper diode ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・Small screen color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 1500 VCEO Collector-emitter voltage Open base 600 VEBO Emitter-base voltage Open collector IC Collector current IB Base current PC Collector power dissipation V 5 V 3.5 A 1 A Ta=25℃ 3.5 Tc=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2089 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=200mA , IC=0 VCEsat Collector-emitter saturation voltage IC=2.2A; IB=0.7A 0.3 1.0 V VBEsat Base-emitter saturation voltage IC=2.2A; IB=0.7A 0.85 1.0 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA hFE DC current gain IC=0.5A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF VF Diode forward voltage IF=2.2A 1.2 1.5 V Fall time ICP=2.2A ;IB1(end)=0.7A 0.2 0.5 μs fT tf 2 5 UNIT V 9 18 Inchange Semiconductor Product Specification 2SD2089 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3