Inchange Semiconductor Product Specification 2SD5702 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P(H)IS package ・Built-in damper diode ・High voltage ,high speed APPLICATIONS ・For color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 16 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD5702 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 40 200 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=3A ; VCE=5V 5 15 fT Transition frequency IC=1A ; VCE=10V VF Diode forward voltage IF=6A 2.0 V Fall time IC=4A ;IB1=0.8A;IB2=-1.6A VCC=200V; RL=50Ω 0.4 μs tf CONDITIONS 2 MIN 3 MHz Inchange Semiconductor Product Specification 2SD5702 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3