VS-25ETS..SPbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 25 A DESCRIPTION/FEATURES Base cathode 2 D2PAK 1 Anode The VS-25ETS..SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level 3 Anode PRODUCT SUMMARY VF at 10 A <1V IFSM 300 A VRRM 800 V to 1200 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 20 23 A Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 25 A Sinusoidal waveform VRRM 800 to 1200 V IFSM 300 A VF 10 A, TJ = 25 °C 1.0 V - 40 to 150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-25ETS08SPbF 800 900 VS-25ETS10SPbF 1000 1100 VS-25ETS12SPbF 1200 1300 TJ VOLTAGE RATINGS PART NUMBER 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I 2t Maximum I2√t for fusing I2√t Document Number: 94342 Revision: 09-Apr-10 TEST CONDITIONS VALUES TC = 106 °C, 180° conduction half sine wave 25 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 For technical questions, contact: [email protected] UNITS A A2s A2√s www.vishay.com 1 VS-25ETS..SPbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 25 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 25 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES UNITS 1.14 V 9.62 mΩ 0.87 V 0.1 mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation UNITS - 40 to 150 °C 0.9 62 Mounting surface, smooth and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES 25ETS08S Marking device Case style D2PAK (SMD-220) 25ETS10S 25ETS12S www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94342 Revision: 09-Apr-10 VS-25ETS..SPbF High Voltage Series Input Rectifier Diode, 25 A Vishay High Power Products 60 150 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) RthJC (DC) = 0.9 K/W 140 Ø 130 Conduction angle 120 110 100 90 30° 60° 90° 120° 180° DC 180° 120° 90° 60° 30° 50 40 RMS limit 30 20 Ø Conduction period 10 TJ = 150 °C 80 0 0 5 10 15 20 25 Average Forward Current (A) 94342_01 0 30 30 40 Fig. 4 - Forward Power Loss Characteristics 150 300 RthJC (DC) = 0.9 K/W At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 140 Ø 130 Conduction period 120 DC 110 90° 30° 100 60° Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 20 Average Forward Current (A) 94342_04 Fig. 1 - Current Rating Characteristics 200 100 180° 120° 0 90 0 5 10 15 20 25 30 35 1 40 Average Forward Current (A) 94342_02 94342_05 Fig. 2 - Current Rating Characteristics 40 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 300 180° 120° 90° 60° 30° 35 30 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 10 25 RMS limit 20 15 10 Ø Conduction angle 200 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 100 5 TJ = 150 °C 0 0.01 0 0 94342_03 5 10 15 20 25 30 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 94342 Revision: 09-Apr-10 94342_06 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] www.vishay.com 3 VS-25ETS..SPbF High Voltage Series Instantaneous Forward Current (A) Vishay High Power Products Input Rectifier Diode, 25 A 1000 TJ = 25 °C 100 TJ = 150 °C 10 1 0 94342_07 1 2 3 4 5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 1 Steady state value (DC operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 94342_08 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94342 Revision: 09-Apr-10 VS-25ETS..SPbF High Voltage Series Input Rectifier Diode, 25 A Vishay High Power Products ORDERING INFORMATION TABLE Device code VS- 25 E T S 12 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (25 = 25 A) 3 - Circuit configuration TRL PbF 8 9 E = Single diode 4 - Package: T = TO-220AC 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - S = TO-220 D2PAK (SMD-220) version 8 - S = Standard recovery rectifier 08 = 800 V 10 = 1000 V 12 = 1200 V None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Document Number: 94342 Revision: 09-Apr-10 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1