10ETS..FPPbF High Voltage Series Vishay High Power Products Input Rectifier Diode TO-220 FULL-PAK, 10 A DESCRIPTION Base cathode TO-220AC FULL-PAK The 10ETS12FPPbF rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. 3 Anode 1 Cathode < 1.1 V IFSM 200 A VRRM 800/1200 V RoHS* COMPLIANT Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. Fully isolated package (VINS = 2500 VRMS) is UL E78996 approved PRODUCT SUMMARY VF at 10 A Available This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 12.0 16.0 A Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VRRM Range UNITS 10 A 800/1200 V 200 A 1.1 V - 40 to 150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA IFSM VF VALUES 10 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 10ETS08FPPbF 800 900 10ETS12FPPbF 1200 1300 0.5 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 105 °C, 180° conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated VRRM applied 130 10 ms sine pulse, no voltage reapplied 145 t = 0.1 to 10 ms, no voltage reapplied 1450 UNITS A A2 s A2√s * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94335 Revision: 23-Apr-08 For technical questions, contact: [email protected] www.vishay.com 1 10ETS..FPPbF High Voltage Series Vishay High Power Products Input Rectifier Diode TO-220 FULL-PAK, 10 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES UNITS 1.1 V 20 mΩ 0.82 V 0.05 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device www.vishay.com 2 UNITS - 40 to 150 °C 2.5 62 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES °C/W 0.5 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) Case style TO-220 FULL-PAK (94/V0) For technical questions, contact: [email protected] (lbf · in) 10ETS12FP Document Number: 94335 Revision: 23-Apr-08 10ETS..FPPbF High Voltage Series Input Rectifier Diode TO-220 FULL-PAK, 10 A 150 130 Ø Conduction angle 120 110 100 30° 60° 90 90° 14 12 10 RMS limit 8 Ø Conduction period 6 4 10ETS.. Series TJ = 150 °C 120° 180° 0 0 2 4 6 8 10 0 12 4 6 8 10 12 16 14 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 200 10ETS.. Series RthJC (DC) = 2.5 °C/W 130 Ø Conduction period 120 30° 60° 100 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 180 Peak Half Sine Wave Forward Current (A) 140 110 2 Average Forward Current (A) 150 Maximum Allowable Case Temperature (°C) 16 2 80 90° 160 140 120 100 80 10ETS.. Series 60 120° 180° DC 90 40 0 16 2 4 6 8 10 12 14 16 18 12 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 240 180° 120° 90° 60° 30° 14 1 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 220 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 18 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 20 10ETS.. Series RthJC (DC) = 2.5 °C/W 140 Vishay High Power Products 10 RMS limit 8 6 Ø 4 Conduction angle 2 10ETS.. Series TJ = 150 °C 200 180 160 140 120 100 80 10ETS.. Series 60 40 0 0 2 4 6 8 10 0.01 1.0 0.1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94335 Revision: 23-Apr-08 For technical questions, contact: [email protected] www.vishay.com 3 10ETS..FPPbF High Voltage Series Input Rectifier Diode TO-220 FULL-PAK, 10 A Instantaneous Forward Current (A) Vishay High Power Products 100 TJ = 25 °C TJ = 150 °C 10 10ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 10ETS.. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94335 Revision: 23-Apr-08 10ETS..FPPbF High Voltage Series Input Rectifier Diode TO-220 FULL-PAK, 10 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 10 E T S 12 FP PbF 1 2 3 4 5 6 7 1 - Current rating (10 = 10 A) 2 - Circuit configuration: E = Single diode 3 - 4 - Package: T = TO-220AC Type of silicon: S = Standard recovery rectifier 5 - Voltage rating 6 - FULL-PAK 7 - 08 = 800 V 12 = 1200 V None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95005 Part marking information http://www.vishay.com/doc?95009 Document Number: 94335 Revision: 23-Apr-08 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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