40EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode The 40EPS..PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. 2 TO-247AC modified 1 Cathode 3 Anode Pb-free Available RoHS* COMPLIANT Typical applications are in input rectification and these products are designed to be used with Vishay HPP Switches and output rectifiers which are available in identical package outlines. PRODUCT SUMMARY VF at 40 A 1.1 V IFSM 475 A VRRM 800/1200 V This product has been designed and qualified for industrial level and lead (Pb)-free. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VRRM Range IFSM VF 40 A, TJ = 25 °C VALUES UNITS 40 A 800/1200 V 475 A 1.1 V - 40 to 150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 40EPS08PbF 800 900 40EPS12PbF 1200 1300 TJ VOLTAGE RATINGS PART NUMBER 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 105 °C, 180° conduction half sine wave 40 10 ms sine pulse, rated VRRM applied 400 10 ms sine pulse, no voltage reapplied 475 10 ms sine pulse, rated VRRM applied 800 10 ms sine pulse, no voltage reapplied 1131 t = 0.1 to 10 ms, no voltage reapplied 11 310 UNITS A A2 s A2√s * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94343 Revision: 06-Jun-08 For technical questions, contact: [email protected] www.vishay.com 1 40EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 20 A, TJ = 25 °C 1.0 40 A, TJ = 25 °C 1.1 TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM UNITS V 7.16 mΩ 0.74 V 0.1 mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storrage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device www.vishay.com 2 UNITS - 40 to 150 °C 0.6 40 Mounting surface, flat, smooth and greased °C/W 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-247AC modified (JEDEC) For technical questions, contact: [email protected] 40EPS08 40EPS12 Document Number: 94343 Revision: 06-Jun-08 40EPS..PbF High Voltage Series Input Rectifier Diode, 40 A 150 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 80 40EPS.. Series RthJC (DC) = 0.6 K/W 145 140 135 130 Ø Conduction angle 125 120 30° 60° 115 90° 120° 110 Vishay High Power Products 180° 105 100 60 50 0 40 30 Ø Conduction period 20 40EPS.. Series TJ = 150°C 10 5 10 15 20 25 30 35 40 0 45 Instantaneous Forward Current (A) 150 40EPS.. Series RthJC (DC) = 0.6 K/W 140 130 Ø Conduction period 30° 120 60° 90° 120° 110 180° DC 100 0 10 20 30 40 50 60 10 40EPS.. Series 1 0 25 Ø Conduction angle 15 10 40EPS.. Series TJ = 150 °C 5 0.5 5 10 15 20 25 30 35 40 VFM - Forward Voltage Drop (V) Fig. 3 - Forward Power Loss Characteristics Document Number: 94343 Revision: 06-Jun-08 1.0 1.5 2.0 2.5 3.0 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 400 350 300 250 200 150 0 0 Peak Half Sine Wave Forward Current (A) RMS limit 30 20 70 TJ = 150 °C 10 450 35 60 TJ = 25 °C 500 40 50 Instantaneous Forward Voltage (V) Fig. 5 - Forward Voltage Drop Chacteristics 180° 120° 90° 60° 30° 45 40 100 70 60 50 30 1000 Average Forward Current (A) Fig. 2 - Current Rating Characteristics 55 20 Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Average Forward Current (A) Fig. 1 - Current Rating Characteristics Maximum Allowable Case Temperture (°C) RMS limit 0 95 Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 70 40EPS.. Series 100 0.01 0.1 1.0 Pulse Train Duration (S) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] www.vishay.com 3 40EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A ZthJC - Transient Thermal Impedance (°C/W) 1 Steady state value: (DC operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.001 40EPS.. Series 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 7 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code 40 E P S 12 PbF 1 2 3 4 5 6 1 - Current rating (40 = 40 A) 2 - Circuit configuration: E = Single diode 3 - Package: P = TO-247AC modified 4 - Type of silicon: S = Standard recovery rectifier 5 - 6 - 08 = 800 V Voltage rating 12 = 1200 V None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95253 Part marking information http://www.vishay.com/doc?95255 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94343 Revision: 06-Jun-08 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1