VDRM VRRM ITGQM VT0 rT = = = = = 6000 6000 800 3.25 6.4 V V A V Reverse Blocking Integrated Gate-Commutated Thyristor 5SHZ 08F6000 mΩ Ω Doc. No. 5SYA1231-01 Sep. 01 • Optimized for current source inverter (CSI) • Fast response (tdon < 3 µs, tdoff < 7 µs) • Precise timing (∆ ∆tdoff < 400 ns) • Direct fiber optic control • Status feedback • Cosmic radiation withstand rating • Very high EMI immunity Blocking VDRM VRRM IDRM IRRM VAC Repetitive peak off-state voltage Reverse repetitive peak off-state voltage Repetitive peak off-state current 6000 V 6000 V Reverse repetitive peak off-state current Max. AC voltage for 100 FIT failure rate Mechanical data ≤ 50 mA VD = VDRM ≤ 50 mA VR = VRRM 3600 V 0 ≤ Tjop ≤ 125 °C. Ambient cosmic radiation at sea level in open air. (see Fig. 8) min. 12 kN max. 16 kN Fm Mounting force Dp Pole-piece diameter 47 mm ±0.1 mm H Housing thickness 26 mm ±0.5 mm m Weight IGCT DS Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 13 mm l Length IGCT 250 mm +0/-0.5 mm h Height IGCT 44 mm ±1.0 mm w Width IGCT 208 mm +0/-0.5 mm 1.00 kg ABB Semiconductors AG reserves the right to change specifications without notice. 5SHZ 08F6000 On-state (see Fig. 2) ITAVM Max. average on-state current 290 A ITRMS Max. RMS on-state current 450 A VT On-state voltage VT0 Threshold voltage rT Slope resistance ≤ 8.40 V 3.25 V 6.4 mΩ Half sine wave, TC = 85 °C IT = 800 A IT = 200 - 800 A Tj = Tj = 125 °C Self commutation (VD > 0 V) Turn-on switching (see Fig. 3, 10, 11) di/dtcrit Max. rate of rise of on-state current ton (min) Min. on-time tdon Turn-on delay time ≤ 3 µs VD = 3000 V tr Rise time ≤ 1.5 µs IT = 800 A di/dt = 500 A/µs Eon Turn-on energy per pulse ≤ 0.8 J RS = 10 Ω Lcomm = 6 µH CS = 0.1 µF Tj = 0…125 °C 1300 A/µs 0…125 °C 10 µs Tj = 125 °C LS = 350 nH Tj = 125 °C Turn-off switching (see Fig. 4, 6, 10, 11) ITGQM Max. contr. turn-off current 800 A toff (min) Min. off-time tf Fall time ≤ 4.0 µs VD = 3000 V tdoff Turn-off delay time ≤ 7.0 µs ITGQ = 800 A Eoff Turn-off energy per pulse ≤ 7.2 J 10 µs RS = 10 Ω CS = 0.1 µF Tj = 0…125 °C VDM ≤ VDRM Lcomm = 6 µH LS = 350 nH Tj = 125 °C Load commutation (VD < 0 V) Turn-off switching (see Fig. 5, 6, 10, 11) di/dtcrit Max. rate of rise of on-state current Irr Reverse recovery current ≤ 750 A VD = -3000 V Qrr Reverse recovery charge ≤ 1500 µC IT = 800 A di/dt = 500 A/µs Err Turn off energy per pulse ≤ RS = 10 Ω Lcomm = 6 µH CS = 0.1 µF 1300 A/µs 6.0 J LS = 350 nH VRM ≤ VRRM ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 3 of 8 5SHZ 08F6000 Gate Unit Gate Unit Power supply (see Fig. 7 to 10) VGDC Gate Unit supply voltage PGin Gate Unit power consumption X1 Gate Unit power connector 20 ±0.5 VDC ≤ 58 W Without galvanic isolation to power circuit. fS = 750 Hz, ITGQ = 400 A, δ = 0.33 Phoenix, Type MSTB 2.5/2-G-5.08 Au Note 1 Optical control input/output (see Fig. 8 to 10) Pon CS Optical input power > -20 dBm Poff CS Optical noise power < -45 dBm Valid for 1mm plastic optical fibre Pon SF Optical output power > -15 dBm (POF) Poff SF Optical noise power < -50 dBm tGLITCH Pulse width threshold ≤ 400 ns CS Receiver for command signal Agilent, Type HFBR-2528 Note 2 SF Transmitter for status feedback Agilent, Type HFBR-1528 Note 2 Max. pulse width without response Visual feedback (see Fig. 8, 9) LED1 (green) Power supply voltage ok "Light" when power supply is within specified rang LED2 (green) Gate-cathode interface ok "Light" when no short circuit, no open and mouning force is applied. LED3 (yellow) Off gated "Light" when gate-current is flowing LED4 (red) Off gated "Light" when GCT is off LED5 (red) Not ready (failure) (optional) Note 1: Phoenix Contact, www.phoenixcontact.com Note 2: Agilent Technologies, www.semiconductor.agilent.com ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 4 of 8 5SHZ 08F6000 Thermal Tj Operating junction temperature range 0…125 °C Tstg Storage temperature range -40…60 °C Tamb Ambient operational temperature range RthJC Thermal resistance junction to case ≤ 23 K/kW Double side cooled RthCH Thermal resistance case to heatsink ≤ 7.5 K/kW Double side cooled 0…60 °C Analytical function for transient thermal impedance: 4 Z thJC (t) = å R (1 - e i - t /τi ) i 1 2 3 4 Ri (K/kW) 15.5 3.35 2.92 1.17 τi (s) 0.57 0.087 0.013 0.0035 i=1 ZthJC [K/kW] Fm = 12...16 kN Double side cooled 25 20 15 10 5 0 10-3 2 3 4 5 6 7 8 10-2 2 3 4 5 6 7 8 10-1 2 3 4 5 6 7 8 100 2 3 4 5 6 7 8 101 t [s] Fig. 1 Transient thermal impedance (junction-to-case) vs. time (max. values). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 5 of 8 5SHZ 08F6000 Eon [J] 1.2 IT [A] 1200 Tj = 125 °C Tj = 125°C Tj = 25°C 1000 1.0 800 0.8 600 0.6 400 0.4 200 0.2 VD = 3000V VD = 2000V 0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.0 0 VT [V] Fig. 2 On-state characteristics. VD = 1000V 200 400 600 800 1000 IT [A] Fig. 3 Turn-on energy per pulse Self commutation (VD > 0 V) Err [J] 8.0 Eoff [A] 8.0 Tj = 125 °C Tj = 125 °C 7.0 VD = 3000V 7.0 VD = 3000V 6.0 6.0 VD = 2000V 5.0 5.0 4.0 4.0 VD = 2000V VD = 1000V 3.0 3.0 2.0 2.0 VD = 1000V 1.0 1.0 0.0 0.0 0 200 400 600 800 Fig. 4 Turn-off energy per pulse Self commutation (VD > 0 V). 1000 ITGQ [A] 0 200 400 600 800 1000 IT [A] Fig. 5 Turn-off energy per pulse Load commutation (VD < 0 V). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 6 of 8 5SHZ 08F6000 ITGQ [A] PGin [W] 900 80 800 70 Tj = 0..125 °C V DM ≤ V DRM 700 fs = 1000 Hz V RM ≤ V RRM Lcomm = 3...6 µ H 60 Cs = 0.1 µ F Rs = 5...10 Ω 600 duty cycle δ = 0.33 VD > 0 V fs = 750 Hz 50 500 40 400 30 300 fs = 250 Hz 20 200 10 100 0 0 0 1000 2000 3000 4000 0 100 VD [V] Fig. 6 Max. repetitive turn-off current. 200 300 400 ITGQ [A] Fig. 7 Gate Unit power consumption. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 7 of 8 5SHZ 08F6000 Fig. 8 Device Outline Drawing. Gate Unit X1 RB-GCT Supply (20VDC) Internal Supply (without galvanic isolation to power circuit) LED1 LED2 LED3 LED4 LED5 CS SF TurnOn Circuit Command Signal (Light) Status Feedback (Light) Rx Tx Logic Monitoring TurnOff Circuit Anode Gate Cathode Fig. 9 Block diagram RB-IGCT. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 8 of 8 5SHZ 08F6000 Turn-on (VD > 0 V) Turn-off (VD > 0 V) di/dt VDM VD 0.9 VD IT IT VG 0.8 ITGQ CS 0.1 VD CS tr VD 0.3 ITGQ tdon VG tf tdoff Turn-off (VD < 0 V) di/dt IT VG Irr Qrr VD Fig. 10General current and voltage waveforms with RB-IGCT specific symbols. ½ Lcomm LS DUT1 RS Ld CS + CDC LS DUT2 RS CS ½ Lcomm Fig. 11Test circuit. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email [email protected] Internet www.abbsem.com Doc. No. 5SYA1231-01 Sep. 01