VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 · Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode · Industry standard housing · Cosmic radiation withstand rating Blocking VGR ³ 2V VDRM Repetitive peak off-state voltage 2500 V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current £ 30 mA VD = VDRM VGR ³ 2V IRRM Repetitive peak reverse current £ 50 mA VR = VRRM RGK = ¥ VDClink Permanent DC voltage for 100 1400 V FIT failure rate -40 £ Tj £ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) Fm A Mounting force min. 17 kN max. 24 kN Acceleration: 50 m/s2 Device unclamped Device clamped 200 m/s2 M Weight 0.8 kg DS Surface creepage distance ³ 22 mm Da Air strike distance ³ 13 mm ABB Semiconductors AG reserves the right to change specifications without notice. 5SGA 20H2501 GTO Data On-state ITAVM Max. average on-state current ITRMS Max. RMS on-state current ITSM Max. peak non-repetitive surge current I2t Limiting load integral 830 A Half sine wave, TC = 85 °C 1300 A 16 kA tP = 10 ms Tj = 125°C 32 kA tP = 1 ms After surge: 2 1.28×106 A s tP = 10 ms VD = VR = 0V 2 0.51×106 A s tP = 1 ms VT On-state voltage 2.80 V IT = 2000 A VT0 Threshold voltage 1.66 V IT = 200 - 2500 rT Slope resistance 0.57 mW IH Holding current 50 A Tj = 25 °C VGT Gate trigger voltage 1.0 V VD = 24 V IGT Gate trigger current 2.5 A RA = 0.1 W VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 50 mA VG = VGRM Max. rate of rise of on-state 400 A/µs f = 200Hz IT = 2000 A, current 700 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs td Delay time 1.5 µs VD = tr Rise time 3.5 µs IT = 2000 A di/dt = 200 A/µs ton(min) Min. on-time 80 µs IGM = 30 A diG/dt = 20 A/µs Eon Turn-on energy per pulse 0.75 Ws CS = 2000 A VDM = VDRM diGQ/dt = CS = 4 µF LS £ 0.3 µH VD = ½ VDRM VDM = VDRM A Tj = 125 °C Gate Tj = 25 °C Turn-on switching di/dtcrit 0.5 VDRM Tj 4 µF RS Tj = 125 °C = = 125 °C 5W Turn-off switching ITGQM Max controllable turn-off current ts Storage time 22.0 µs tf Fall time 2.0 µs toff(min) Min. off-time 80 µs ITGQ = ITGQM Eoff Turn-off energy per pulse 3.5 Ws CS = IGQM Peak turn-off gate current 700 A LS Tj = 125 °C diGQ/dt = £ 4 µF RS = 30 A/µs 30 A/µs 5W 0.3 µH ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 2 of 9 5SGA 20H2501 Thermal Tj Storage and operating -40...125°C junction temperature range RthJC RthCH Thermal resistance 30 K/kW Anode side cooled junction to case 39 K/kW Cathode side cooled 17 K/kW Double side cooled 10 K/kW Single side cooled 5 K/kW Double side cooled Thermal resistance case to heat sink Analytical function for transient thermal impedance: 4 Z thJC (t) = å R i(1 - e - t / t i ) i=1 Fig. 1 i 1 2 3 4 RI (K/kW) 11.7 4.7 0.64 0.0001 ti (s) 0.9 0.26 0.002 0.001 Transient thermal impedance, junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 3 of 9 5SGA 20H2501 Fig. 2 On-state characteristics Fig. 4 Surge current and fusing integral vs. pulse width Fig. 3 Average on-state power dissipation vs. average on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 4 of 9 5SGA 20H2501 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 8 Gate trigger current vs. junction temperature ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 5 of 9 5SGA 20H2501 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt = 20 A/µs CS = 4 µF RS =5W Tj = 125 °C Definition of Turn-on energy: 20 m s E on = òV D × ITdt (t = 0, IG = 0.1 × IGM ) 0 Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: 40 m s E off = òV D × ITdt ( t = 0, IT = 0.9 × ITGQ ) 0 Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 6 of 9 5SGA 20H2501 Eoff [J] 6.0 5.0 4.0 5SGA 20H2501 Conditions: VD = 0.5×VDM di GQ / dt = 30 A/ms CS = 4 mF, RS = 5 W T j = 125°C QGQa [ mC] 7000 5000 4000 0.75 VDRM 0.5 VDRM 2.0 3000 5SGA 20H2501 3.5 Conditions: V D = 0.75 V DM , V DM = V DRM di GQ /dt = 30 A/ ms 3.0 RS = 5 W 6000 QGQa VDM=VDRM 3.0 Eoff [J] 4.0 Tj = 125°C 2.5 2.0 CS = 3 mF 1.5 CS = 6 mF 1.0 1.0 2000 0.0 0 500 1000 1000 2000 1500 0.5 0.0 0 ITGQ [A] Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. CS = 4 mF 500 1000 1500 2000 ITGQ [A] Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Eoff [J] ts [ms] 5 50 4 IGQM [A] 1000 5SGA 20H2501 40 800 IGQM 3 30 2 20 1 10 0 400 tS Conditions: VD = 0.5 VDM , VDM = VDRM ITGQ = 2000 A ,di GQ /dt = 30 A/m s CS = 4 mF, RS = 5 W , Tj = 125 °C 0 -10 600 EOFF 0 10 20 2530 40 50 60 707580 200 0 90 100 110 120 125 Tj [°C] Fig. 14 Required snubber capacitor vs. max allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature 1000 ts [s] 50 800 40 800 30 600 30 600 20 400 20 200 10 ts [s] 50 IGQM [A] 5SGA 20H2501 40 tS 5SGA 20H2501 IGQM [A] 1000 IGQM IGQM 10 Conditions: ITGQ = 2000 A Tj = 125 °C 0 0 0 10 20 30 40 50 60 di GQ/dt [A/ms] Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. 400 Conditions: diGQ/dt = 30 A/m s Tj = 125 °C tS 0 0 500 1000 1500 200 0 2000 I TGQ [A] Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 7 of 9 5SGA 20H2501 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 8 of 9 5SGA 20H2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA1205-01 Jun. 04