VISHAY MSS1P2U

New Product
MSS1P2U, MSS1P3U
Vishay General Semiconductor
Ultra Low VF Surface Mount Schottky Barrier Rectifiers
FEATURES
®
• Very low profile - typical height of 0.65 mm
eSMP Series
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Caution: High reverse leakage
Top View
Bottom View
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MicroSMP
The ultra low VF Schottky optimized for forward voltage drop
with high reverse current trade-off.
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V, 30 V
IFSM
30 A
VF at IF = 1.5 A
0.30 V
TJ max.
125 °C
APPLICATIONS
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
Application designed and qualified for hard disc driver
where the VF performance and size are required. HTIR is not
a concern.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
MSS1P2U
MSS1P3U
12U
13U
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
TJ
- 55 to + 125
°C
TSTG
- 55 to + 150
°C
Operating junction temperature range
Storage temperature range
Document Number: 89095
Revision: 19-Apr-11
20
30
V
For technical questions within your region, please contact one of the following:
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[email protected], [email protected], [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
MSS1P2U, MSS1P3U
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 0.5 A
IF = 1.0 A
TJ = 25 °C
IF = 1.5 A
Maximum instantaneous
forward voltage
VF (1)
IF = 0.5 A
TJ = 85 °C
IF = 1.0 A
IF = 1.5 A
TJ = 25 °C
Maximum reverse current
Rated VR
Typical junction capacitance
4.0 V, 1 MHz
TJ = 125 °C
IR (2)
TYP.
MAX.
0.23
-
0.30
-
0.35
0.40
0.16
-
UNIT
V
0.24
-
0.30
0.35
0.4
1.2
μA
12
30
mA
68
-
pF
CJ
Notes
• Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage
conditions. Calculations of TJ therefore must include forward and reverse power effects.
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
MSS1P3U
RJA (1)
170
RJM (1)
30
UNIT
°C/W
Note
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
JA - junction to ambient, RJM - junction to mount.
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MSS1P3U-M3/89A
0.006
89A
4500
7" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
0.5
D = 0.3
1.0
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
0.8
0.6
0.4
TM Measured
at the Cathode Band Terminal
0.2
D = 0.5
D = 0.8
D = 0.2
0.4
D = 0.1
0.3
D = 1.0
0.2
T
0.1
D = tp/T
tp
0
0
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
Document Number: 89095
[email protected], [email protected], [email protected]
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
MSS1P2U, MSS1P3U
Vishay General Semiconductor
1000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
TA = 100 °C
1
TA = 25 °C
0.1
TA = 85 °C
0.01
0
0.2
0.4
0.6
0.8
10
1.0
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
TJ - Derated Operating Temperature (°C)
100
Instantaneous Reverse Current (mA)
100
TA = 100 °C
10
TA = 85 °C
1
0.1
TA = 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
125
115
105
95
85
75
65
3
6
9
12
15
18
21
24
27
30
Percent of Rated Peak Reverse Voltage (%)
VR - DC Reverse Voltage (V)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Operating Temperature Derating
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP
0.059 (1.50)
0.043 (1.10)
Cathode Band
0.055 (1.40)
0.047 (1.20)
0.030 (0.75)
0.022 (0.55)
0.039 (0.98)
0.031 (0.78)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
0.030 (0.75)
0.022 (0.55)
Mounting Pad Layout
0.079
(2.00)
0.029 (0.73)
0.025 (0.63)
0.043
(1.10)
0.011 (0.27)
0.005 (0.12)
Document Number: 89095
Revision: 19-Apr-11
0.032
(0.80)
0.032
(0.80)
0.020 (0.50)
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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