Inchange Semiconductor Product Specification 2SC1358 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 4.5 A ICM Collector current-peak 10 A IB Base current 1.5 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SC1358 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 10 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.2 V ICES Collector cut-off current VCE=1400V; VBE=0 1.0 mA ICBO Collector cut-off current VCB=1000V; IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 200 μA hFE-1 DC current gain IC=0.5A ; VCE=15V 10 45 hFE-2 DC current gain IC=3A ; VCE=15V 5 35 tstg CONDITIONS Storage time MIN TYP. MAX 500 UNIT V 10 μs 1.0 μs IC=4A; IB1=-IB2=1.0A PW=20μs tf Fall time 2 Inchange Semiconductor Product Specification 2SC1358 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3