Inchange Semiconductor Product Specification 2SC1325 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PD Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1. 56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC1325 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A 4.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.2 A 1.1 V ICES Collector cut-off current VCE=1500V;VBE=0 1.0 mA ICBO Collector cut-off current VCB=1000V; IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 200 μA hFE-1 DC current gain IC=1A ; VCE=15V 10 45 hFE-2 DC current gain IC=5A ; VCE=15V 5 35 ts Storage time tf Fall time CONDITIONS MIN TYP. MAX 600 V 10 μs 0.8 μs IC=5A ;IB1=-IB2=1.0A PW=20μs 2 UNIT Inchange Semiconductor Product Specification 2SC1325 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3