Inchange Semiconductor Product Specification BUH515D Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of large screen color TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 8 A ICM Collector current -peak 15 A IB Base current (DC) 5 A IBM Base current -peak 8 A Ptot Total power dissipation 50 W Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BUH515D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat MIN TYP. MAX UNIT IC=5A ;IB=1.25A 1.5 V Base-emitter saturation voltage IC=5A ;IB=1.25A 1.3 V ICES-1 Collector cut-off current VCE=1300V; VBE=0 10 μA ICES-2 Collector cut-off current VCE=1500V; VBE=0 Tj=125℃ 0.2 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 200 mA hFE DC current gain IC=5A ; VCE=5V VF Diode forward voltage IF=5A 5 10 2 V 2.4 3.6 μs 170 260 ns Switching times ts Storage time IC=5A;IB1=1.5A;-IB2=2.5A; VCC=400V tf Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case 2 MAX UNIT 2.5 ℃/W Inchange Semiconductor Product Specification BUH515D Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3