ISC BUH515D

Inchange Semiconductor
Product Specification
BUH515D
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage
・High speed switching
・Built-in damper diode
APPLICATIONS
・For use in horizontal deflection circuits
of large screen color TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
8
A
ICM
Collector current -peak
15
A
IB
Base current (DC)
5
A
IBM
Base current -peak
8
A
Ptot
Total power dissipation
50
W
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BUH515D
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter saturation voltage
VBEsat
MIN
TYP.
MAX
UNIT
IC=5A ;IB=1.25A
1.5
V
Base-emitter saturation voltage
IC=5A ;IB=1.25A
1.3
V
ICES-1
Collector cut-off current
VCE=1300V; VBE=0
10
μA
ICES-2
Collector cut-off current
VCE=1500V; VBE=0
Tj=125℃
0.2
2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
200
mA
hFE
DC current gain
IC=5A ; VCE=5V
VF
Diode forward voltage
IF=5A
5
10
2
V
2.4
3.6
μs
170
260
ns
Switching times
ts
Storage time
IC=5A;IB1=1.5A;-IB2=2.5A;
VCC=400V
tf
Fall time
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
2
MAX
UNIT
2.5
℃/W
Inchange Semiconductor
Product Specification
BUH515D
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3