Inchange Semiconductor Product Specification BUH515 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching APPLICATIONS ・Horizontal deflection for color TV and monitors. ・Switch mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 8 A ICM Collector current-peak 12 A IB Base current (DC) 5 A IBM Base current-peak 8 A Ptot Total power dissipation 50 W 150 ℃ -65~150 ℃ Tj Tstg Operating junction temperature Storage temperature TC=25℃ Inchange Semiconductor Product Specification BUH515 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 Tj=125℃ 0.2 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=5V 6 MAX UNIT 12 Switching times ts Storage time 2.7 3.9 μs 190 280 ns IC=5A;IB1=1.25A;IB2=2.5A; VCC=400V tf Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case 2 MAX UNIT 2.5 ℃/W Inchange Semiconductor Product Specification BUH515 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3