ISC BUH515

Inchange Semiconductor
Product Specification
BUH515
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage
・High speed switching
APPLICATIONS
・Horizontal deflection for color
TV and monitors.
・Switch mode power supplies.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
8
A
ICM
Collector current-peak
12
A
IB
Base current (DC)
5
A
IBM
Base current-peak
8
A
Ptot
Total power dissipation
50
W
150
℃
-65~150
℃
Tj
Tstg
Operating junction temperature
Storage temperature
TC=25℃
Inchange Semiconductor
Product Specification
BUH515
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1.25A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.25A
1.3
V
ICES
Collector cut-off current
VCE=1500V; VBE=0
Tj=125℃
0.2
2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=5A ; VCE=5V
6
MAX
UNIT
12
Switching times
ts
Storage time
2.7
3.9
μs
190
280
ns
IC=5A;IB1=1.25A;IB2=2.5A;
VCC=400V
tf
Fall time
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
2
MAX
UNIT
2.5
℃/W
Inchange Semiconductor
Product Specification
BUH515
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3